NXP UM11972 Evolution Board User Manual
- July 10, 2024
- NXP
Table of Contents
NXP UM11972 Evolution Board
Product Information
Specifications
- Product Name: BTS6306U Evaluation Board
- Manufacturer: NXP Semiconductors
- Revision: 1.1
- Date: 15 April 2024
Product Usage Instructions
1. Introduction
This document provides information on the use, design, and testing of the BTS6306U EVB.
2. BTS6306U Product Description
The BTS6306U EVB features various components including VEN, VCC1, RFin_p, RFin_n, GND, VCC2, RFout, and more as depicted in Figure 1.
3. BTS6306U EVB Properties
3.1 Schematic
The schematic of the BTS6306U EVB can be referenced in Figure 2.
3.2 DC and Control Connections
Refer to Figure 3 for DC and enable connections at the main header (J117). Connectors J118 GND and J1 ISET are also shown in Figure 4.
3.3 Operations
Figure 5 illustrates single-ended to single-ended operation connections, while Figure 6 shows differential to single-ended operation connections.
4. Measurements Results
Measured Spar values under nominal conditions are displayed in Figures 7 to 10.
FAQ
- Q: What does the abbreviation ACLR stand for?
- A: ACLR stands for Adjacent Channel Leakage Ratio.
- Q: Who is responsible for ensuring EMC compliance of the product assembly?
- A: It is the responsibility of the user to ensure that any finished assembly complies with applicable regulations on EMC interference.
Introduction
This document describes the use, design, and test results of the BTS6306U EVB.
BTS6306U product description
The BTS6306U is a wideband high linearity pre-driver amplifier with a differential input for 5G massive MIMO infrastructure applications, with fast on-off switching to support TDD systems. The amplifier is designed to operate between 3.3 GHz and 4.2 GHz. The BTS6306U is housed in a 3 mm x 3 mm x 0.85 mm 16-terminal HVQFN package.
BTS6306U’s key features and benefits
- High saturated output power Po(sat) = 28.5 dBm
- High power-gain Gp = 38 dB
- High linearity performance ACLR better than -45 dBc
- Unconditionally stable
- Fast switching to support TDD systems
- 5 V single supply, quiescent current 100 mA
- Small 16-terminal leadless package 3 mm x 3 mm x 0.85 mm
- ESD protection on all terminals
- Moisture sensitivity level 1
BTS6306U product description
BTS6306U EVB properties
Schematic
DC and control connections
Figure 3 shows the DC and enable connection, at the main header (J117). The
connector can be straight or 90 degrees. The text is also on the EVB. Figure 4
shows connectors J118 GND, and J1 ISET. J1 (ISET) on the EVB has no
functionality for BTS6306U and should be left open.
Operations
Figure 5 shows the connections in a single-ended to single-ended operation.
Figure 6 shows the connections on differential to single-ended operation. If
only single-ended to single-ended operation is needed, NXP refers to UM11646
of the BTS6303U.
Measurements results
In the below graphics, the Spar measurements are shown. Measured at nominal
conditions VCC = 5 V, Tcase = 25 °C.
Abbreviations
Table 1. Abbreviations
| Acronym | Description |
|---|---|
| ACLR | adjacent channel leakage ratio |
| ESD | electrostatic discharge |
| EVB | evaluation board |
| mMIMO | massive multiple-input multiple-output |
| RF | radio frequency |
| TDD | time-division duplexing |
EMC information
CAUTION
This product has not undergone formal EMC assessment. It is the responsibility of the user to ensure that any finished assembly complies with applicable regulations on EMC interference. EMC testing, and other testing requirements for CE is the responsibility of the user.
Revision history
Table 2. Revision history
| Document ID | Release date | Description |
|---|---|---|
| UM11972 Rev. 1.1 | 15 April 2024 | • Updated Legal information and brought to |
the current standard
UM11972 Rev. 1| 8 September 2023| • Initial release of user manual
Legal information
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- 2024 NXP B.V. All rights reserved.
- For more information, please visit: https://www.nxp.com
- Date of release: 15 April 2024
- Document identifier: UM11972
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