Fuji Electric REH984f Fuji IGBT Module Installation Guide

Fuji Electric REH984f Fuji IGBT Module

Product Information

• The Fuji IGBT Module is a high-performance electronic component designed for various applications. It features a bipolar structure that reduces on-resistance at large currents through conductivity modulation. The module is designed to provide low on-state voltage and improved transport efficiency.
• The module is available in different structures, including punch-through type, non-punch-through type, and field stop type. These structures offer different characteristics and performance levels.
• The module is built with a high-reliability design, incorporating a case and external electrode terminals molded into a single unit. It also utilizes a DCB (direct copper bonding) substrate, which provides low thermal resistance and high bending strength.

Product Usage Instructions

1. Before using the Fuji IGBT Module, ensure that you have obtained the latest specifications from the manufacturer. The contents of the manual are subject to change without notice.
2. Do not use the module in equipment or systems used under life-threatening situations, such as vehicle-mounted units, shipboard equipment, aerospace equipment, medical devices, atomic control systems, and submarine relaying equipment or systems.
3. When considering the application of the module to a particular use, evaluate its applicability in the intended application and assess the risks involved at your own discretion.
4. Ensure that the module is used within its specified voltage and current limits to prevent damage or malfunction.
5. Follow the recommended circuit configuration provided in the manual to ensure proper operation.
6. For safety purposes, make sure to comply with applicable standards, such as UL Certification.
7. Take necessary precautions to comply with RoHS regulations for environmental protection.

Please refer to the complete user manual for detailed instructions, safety precautions, and additional information on the Fuji IGBT Module.

Cautions

• This manual contains the product specifications, characteristics, data, materials, and structures as of March 2023.
• The contents are subject to change without notice for specification changes or other reasons.
• When using a product listed in this manual, be sure to obtain the latest specifications.
• Fuji Electric Co Ltd is constantly making every endeavor to improve product quality and reliability However on rare occasions, semiconductor products may fail or malfunction.
• To prevent accidents causing injury or death damage to property like fire, and other social damage resulting from a failure or malfunction of the Fuji Electric Co Ltd semiconductor products, take measures to ensure safety such as redundant design fire spread prevention design, and malfunction prevention design.
• The contents described in this specification never ensure the industrial property and other rights, nor license the enforcement rights.
• The products described in this specification are not designed nor made for being applied to the equipment or systems used under life-threatening situations.
• When you consider applying the product of this specification to a particular use, such as vehicle-mounted units, shipboard equipment, aerospace equipment, medical devices, atomic control systems, and submarine relaying equipment or systems.
• Fuji Electric is not responsible for the applicability.
• The data and other information contained in this specification are guaranteed for the product but do not guarantee the characteristics and quality of the equipment applying this product When using this product, please evaluate it in the application in which it will be used, and then judge its applicability at user’s own risk Fuji Electric is not responsible for the applicability.
• The insulated gate bipolar transistors ( applied to equipment such as variable speed motor drives and uninterruptible power supplies for computers are developing rapidly in response to the increasing demand for energy saving, weight reduction, and downsizing of equipment in recent years
• The IGBT is a switching device designed to have the high-speed switching performance and gate voltage control of a power MOSFET as well as the high voltage large current handling capability of bipolar transistor

History of IGBT Structure

• Then channel IGBT, which forms an n-type of inversion layer when positive voltage is applied to the gate, has a structure in which the n+ layer on the drain side of the power MOSFET is replaced with a p+ layer It is a bipolar device that can reduce on resistance at large current with conductivity modulation
• The IGBT structure can be roughly divided into the surface gate structure, the bulk structure that forms the n drift layer, and the backside structure There are two types of surface gate structures One is the planar gate structure, in which the gates are formed on the wafer surface, namely the chip surface The other is the trench gate structure, in which trenches are made to form the gates in the wafer On the other hand, the bulk structure can be roughly divided into the punch through type, in which the depletion layer reaches the collector side at turn off, and the nonpunch through type, in which it does not reach the collector side The comparison of the n channel IGBTs is shown in Fig 1 1
• Fuji Electric has been supplying IGBTs to the market since it commercialized them in 1988 The planar gate punch through IGBT was the mainstream IGBT at that time The punch through IGBT used the epitaxial wafer and low on-state voltage were achieved by injecting a large amount of minority carriers from the collector layer to obtain a conductivity modulation effect At the same time, the lifetime control technology was used because the excess carriers which were highly injected into the n base layer, has to be removed quickly at turn As a result, both low on-state voltage and low turn off switching loss E off was achieved The lifetime control technology was widely used because it was relatively easy to apply to the IGBT manufacturing process However, there were problems such as large variations in on-state voltage and the output characteristics showing negative temperature characteristics, Therefore, with the increasing capacity of IGBT modules and the power converters using them, the demand for IGBT characteristics that facilitate parallel connection has increased
• The non-punch-through IGBT was developed to overcome these issues The non-punch-through IGBT controls the minority carrier injection efficiency by controlling the concentration of impurities in the collector (p collector layer), and controls the internal electric field and transport efficiency by controlling the thickness and resistivity of the n drift layer The non-punch through IGBTs use the FZ (Floating Zone) wafer instead of the epitaxial wafer Therefore, the superiority of the FZ wafer compared to the epitaxial wafer can be reflected in the IGBT chip For example, FZ wafers have fewer crystal defects and low internal stress, making it easy to manufacture high voltage chips of 1700 V and above In addition, the carrier lifetime of FZ wafers is very long, and the excess carrier distribution control of the IGBT chip only needs to consider minority carrier injection from the p collector layer Furthermore, variations in characteristics such as on state voltage are greatly reduced.
• On the other hand, in order to achieve a low on-state voltage, it was necessary to improve the transport efficiency In particular, IGBT wafers with a withstand voltage of 1200 V or less required a special manufacturing technology to thin the n drift layer Therefore, Fuji Electric has developed new technologies for production of thinner wafers and improved the characteristics.
• To further improve the characteristics, IGBTs with thinner chip thickness are required However, the thickness of the n drift layer constitutes most of the chip thickness, and if the thickness is too thin, the specified voltage cannot be maintained The FS (Field Stop) structure solved this problem that hinder the improvement of the characteristics In the FS structure, a high concentration FS layer is provided in the n drift layer This structure makes it possible to further reduce the thickness of the chip and improve its characteristics.
• Fuji Electric has also advanced the miniaturization of the surface structure that is imperative to improve the characteristics of IGBT The IGBT is formed by arranging many basic structures called cells The higher the number of IGBT cells, the lower the on state voltage will be In order to increase cell density, the surface structure has changed from the planar structure, in which the IGBT cells are formed on the wafer surface two-dimensionally, to the trench structure, in which the trenches are formed on the wafer surface and the gates structure are formed three-dimensionally In this way, Fuji Electric has improved the characteristics by applying various technologies to the bulk structure and the surface structure.

Module Structure

• Fig. 1-2 and Fig. 1-3 show typical IGBT module structures. The module integrated with the terminal block shown in Fig. 1-2 has a case and external electrode terminals molded into a single unit to reduce the number of parts required and the internal wiring inductance.
• In addition, the use of a DCB (direct copper bonding) substrate realizes a high-reliability product that combines low thermal resistance and high bending strength.
• The wire terminal connection structure module shown in Fig. 1-3 has main terminals bonded to the DCB substrate by wire. As a result, the package structure has been simplified, made smaller, thinner, lighter, and reduced in assembly time.
• Other design considerations implemented include optimal IGBT and FWD chip layout to assure efficient heat distribution, and the equal arrangement of IGBT chips in the upper and lower arms to balance the turn-on transient current and thus prevent the increases in turn-on loss.

Circuit Configuration of IGBT Module

Table 1-1 shows a typical circuit configuration of IGBT modules. As shown in Table 1-1, there are basically four types of IGBT modules: 1-Pack, 2-Pack, 6-Pack, and PIM. Each type has its own features.
The circuit configuration is also shown. Use them as a reference when selecting a module.

Overcurrent Limiting Feature

• During operation, a load short circuit, or a similar problem may cause an overcurrent in the IGBT If the overcurrent is allowed to continue, the device may quickly overheat and be destroyed Generally, the time span from the beginning of the overcurrent to the destruction of the device is called the short circuit withstand capability” In addition, short circuit withstand capability becomes higher ( in condition with lower short circuit current and/or lower power supply voltage In other words, the smaller the short circuit energy, the higher the short circuit withstand capability
• The short circuit current is dependent on the gate voltage The IGBT is designed to limit the short circuit current to several times the device current rating Thus, in the event of a short circuit the overcurrent is limited, allowing protection to be applied with a margin after overcurrent is detected.

RoHS Compliance

• The RoHS (Restriction of the Use of Certain Hazardous Substances in Electrical and Electronic Equipment) was enacted by the EU (European Union) on July 1 2006 to restrict the use of certain hazardous substances in electrical and electronic equipment.
• The use of the following ten substances are restricted Pb ( Cd ( Cr 6 ++(hexavalent chromium), Hg ( PBB polybrominated biphenyl), PBDE polybrominated diphenyl ether), DEHP bis 2 ethylhexyl) phthalate), BBP (butyl benzyl phthalate), DBP dibutyl phthalate) and DIBP diisobutyl phthalate).
• Products containing these 10 substances above the threshold 0 01 for Cd, 0 1 for others) cannot be sold in the EU Exemptions are allowed for uses that are technically difficult to replace Lead Pb contained in the solder used to connect each chip and DCB is particularly relevant to the RoHS compliance of IGBT modules Fuji Electric uses Pb-free solder to commercialize products that comply with RoHS regulations.

Standards for Safety: UL Certification

• When using various devices in the market in regions that require compliance with UL safety regulations such as North American UL certification are required for the parts used in those devices.
• Fuji Electric IGBT modules comply with UL 1557 and are certified The approved models can be checked on the following website https://productiq.ulprospector.com/en/profile/1972723/qqqx2.e82988?term=E82988 &page=1.
• A list of Fuji Electric products which is currently UL-certified is displayed.
• © Fuji Electric Co., Ltd. All rights reserved.

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