Fuji Electric P633A Series Small IPM Intelligent Power Module Installation Guide
- June 12, 2024
- Fuji Electric
Table of Contents
P633A Series Small IPM Intelligent Power Module
Installation Guide
Fuji Small IPM
(Intelligent Power Module)
P633A Series
6MBP*XS060-50
Chapter 1 Product Outline
Application Manual
P633A Series Small IPM Intelligent Power Module
Cautions
This Instruction contains the product specifications, characteristics, data,
materials, and structures as of June 2021. The contents are subject to change
without notice for specification changes or other reason.
When using a product listed in this Instruction be sure to obtain the latest
specifications.
The application examples in this note show the typical examples of using Fuji
products and this note shall neither assure to enforce the industrial property
including some other rights nor grant the license. Although Fuji Electric Co.,
Ltd. continually strives to enhance product quality and reliability, a small
percentage of semiconductor products may become faulty. When using Fuji
Electric semiconductor products in your equipment, be sure to take adequate
safety measures such as redundant, flameretardant and
fail-safe design in order to prevent a semiconductor product failure from
leading to a physical injury, property damage or other problems.
The products described in this application manual are manufactured with the
intention of being used in the following industrial electronic and electrical
devices that require normal reliability.
- Compressor motor inverter
- Fan motor inverter for room air conditioner
- Compressor motor inverter for heat pump applications, etc.
If you need to use a semiconductor product in this application note for equipment requiring higher reliability than normal, such as listed below, be sure to contact Fuji Electric Co., Ltd. to obtain prior approval. When using these products, take adequate safety measures such as a backup system to prevent the equipment from malfunctioning when a Fuji Electric’s product incorporated in the equipment becomes faulty.
- Transportation equipment (mounted on vehicles and ships)
- Trunk communications equipment
- Traffic-signal control equipment
- Gas leakage detectors with an auto-shutoff function
- Disaster prevention / security equipment
- Safety devices, etc.
Do not use a product in this application note for equipment requiring extremely high reliability such as:
- Space equipment
- Airborne equipment
- Atomic control equipment
- Submarine repeater equipment
- Medical equipment
All rights reserved. No part of this application note may be reproduced
without permission in writing from Fuji Electric Co., Ltd.
If you have any question about any portion of this application note, ask Fuji
Electric Co., Ltd. or its sales agencies. Neither Fuji Electric Co., Ltd. nor
its agencies shall be liable for any injury or damage caused by any use of the
products not in accordance with instructions set forth herein.
Introduction
The objective of this document is introducing Fuji IGBT Intelligent-Power-
Module “Small-IPM”.
At first, the product outline of this module is described.
Secondary, the terminal symbol and terminology used in this note and the
specification sheet are explained. Next, the design guideline on signal input
terminals and power terminals are shown using its structure and behavior.
Furthermore, recommended wiring and layout, and the mount guideline are given.
< Product concept>
- 7th gen. IGBT technology offers high-efficiency and energy-saving operation.
- Guarantee Tvjop=150℃ allows expansion of output current.
- Higher accuracy of short circuit detection contribute to expanding over load operating area.
- Compatible pin assignment, foot print size and mounting dimensions as the 1st gen. Small IPM series.
- Product range: 15A – 35A / 600V.
- The total dissipation loss has been improved by improvement of the trade-off between the Collector-Emitter saturation voltage VCE(sat) and switching loss.
< Built-in drive circuit>
- Drives the IGBT under optimal conditions.
- The control IC of upper side arms have a built-in high voltage level shift circuit (HVIC).
- This product is possible to be driven directly by a microprocessor. The upper side arm can also be driven directly. The voltage level of input signal is 3.3V or 5V.
- Since the wiring length between the internal drive circuit and IGBT is short and the impedance of the drive circuit is low, no reverse bias DC source is required.
- Normally, IPM device requires a total of four isolated control power supplies: one for the lower side and three for the upper side. However, since this IPM has built-in bootstrap diodes (BSD), isolated power supplies for the upper side are not needed.
< Built-in protection
circuits>
-
The following built-in protection circuits are incorporated in the product:
(OC): Over current protection
(UV): Under voltage protection for power supplies of control IC
(LT): Temperature sensor output function
(OH): Overheating protection (only applied to some products)
(FO): Fault alarm signal output -
The OC protection circuits protect the IGBT against over current, load short-circuit or arm shortcircuit.
-
The protection circuit can monitor the emitter current using external shunt resistor in each lower side IGBT and thus it can protect the IGBT against arm short-circuit.
-
The UV protection circuit is integrated into all of the IGBT drive circuits and control power supply. This protection function is effective for a voltage drop of all of the high side drive circuits and the control power supply.
-
The OH protection circuit protects the product from overheating. The OH protection circuit is built into the control IC of the lower side arm (LVIC).
-
The temperature sensor output function is built into the LVIC and converts the detected temperature into analog voltage output.
-
The FO function outputs a fault signal when the circuit detects abnormal conditions, thus making it possible to shut down the system reliably and preventing destruction by outputting the fault signal to the microprocessor unit controlling the product.
< Compact package>
- The package of this product includes with an aluminum base, which further improves the heat radiation.
- The control input terminals have a shrink pitch of 1.778mm (70mil).
- The power terminals have a standard pitch of 2.54mm (100mil).
Product line-up and applicable products for this manual
Table. 1-1 Line-up
Type name| Rating of IGBT| Isolation Voltage [Vrms]| Variation*1| Target
application
---|---|---|---|---
Voltage [V]| Current [A]
6MBP15XSD060-50| 600| 15| 1500Vrms Sinusoidal 60Hz, 1min.
(Between shorted all terminals and case)| LT| • Room air conditioner
compressor motor inverter
• Heat pump motor inverter
• Fan motor inverter
• General inverter
• Servo drive etc.
6MBP15XSF060-50| LT
OH
6MBP15XSF060-50
6MBP20XSD060-50| 20| LT
6MBP20XSF060-50| LT
OH
6MBP30XSD060-50| 30| LT
6MBP30XSF060-50| LT
OH
6MBP35XSD060-50| 35| LT
6MBP35XSF060-50| LT
OH
*1 LT: Temperature sensor output function
OH: Overheating protection function
Definition of Type Name and Marking Spec
Table. 1-2
Products code
TYPE NAME
| PRODUCTS CODE
---|---
A1|
A2
6MBP15XSD060-50| L| D
6MBP15XSF060-50| L| F
6MBP20XSD060-50| M| D
6MBP20XSF060-50| M| F
6MBP30XSD060-50| O| D
6MBP30XSF060-50| O| F
6MBP35XSD060-50| P| D
6MBP35XSF060-50| P| F
Package Outline dimensions
Table. 1-3 Case outline drawings
Pin No.
| Pin Name| Pin No.|
Pin Name
---|---|---|---
3| VB(U)| 22| N(W)
5| VB(V)| 23| N(V)
7| VB(W)| 24| N(U)
9| IN(HU)| 26| W
10| IN(HV)| 28| V
11| IN(HW)| 30| U
12| VCCH| 32| P
13| COM| 36| NC
14| IN(LU)| |
15| IN(LV)| |
16| IN(LW)| |
17| VCCL| |
18| VFO| |
19| IS| |
20| COM| |
21| TEMP| |
Absolute Maximum Ratings
An example of the absolute maximum ratings of 6MBP20XSD060-50 is shown in
Table 1-4.
Table 1-4 Absolute Maximum Ratings at Tvj=25.C,VCC=15V (unless otherwise
specified)
Item
| Symbol| Rating| Unit|
Description
---|---|---|---|---
DC bus Voltage| V DC| 450| V| DC voltage that can be applied between
P-N(U),N(V),N(W) terminals
Bus Voltage (Surge)| V DC(Surge)| 500| V| Peak value of the surge voltage
that can be applied between P- N(U),N(V),N(W) terminals during switching
operation
Collector-Emitter Voltage| V CES| 600| V| Maximum voltage that can be
applied between collector and emitter with V IN-COM shorted
Collector Current| I C| 20| A| Maximum collector current for the IGBT chip
T c=25°C, T ｖj=150°C
Peak Collector Current| I CP| 40| A| Maximum pulse collector current for
the IGBT chip T c=25°C, T vj=150°C
Diode Forward Current| I F| 20| A| Maximum forward current for the FWD chip
T c=25°C, T vj=150°C
Peak Diode Forward Current| I FP| 40| A| Maximum pulse forward current for
the FWD chip T c=25°C, T vj=150°C
Collector Power Dissipation| P D_IGBT| 41.0| W| Maximum power dissipation
for one IGBT element at T c=25°C, T vj=150°C
FWD Power Dissipation| P D_FWD| 27.8| W| Maximum power dissipation for one
FWD element at T c=25°C, T vj=150°C
Maximum Junction Temperature of Inverter Block| T vj| +150| °C| Maximum
junction temperature of the IGBT chips and the FWD chips. Operating life is
limited by junction temperature and power cycle.
Operating Junction Temperature of Inverter Block| T vjOP| -40 ~ +150| °C|
Junction temperature of the IGBT and FWD chips during continuous operation.
Operating life is limited by junction temperature and power cycle.
High-side Supply Voltage| V CCH| -0.5 ~ 20| V| Voltage that can be applied
between COM and VCCH terminal
---|---|---|---|---
Low-side Supply Voltage| V CCL| -0.5 ~ 20| V| Voltage that can be applied
between COM and VCCL terminal
High-side Bias Supply Voltage| V B(U)-COM
V B(V)-COM
V B(W)-COM|
-0.5 ~ 620
|
V
| Voltage that can be applied between VB(U)-COM, VB(V)- COM,VB(W)-COM terminal
High-side Bias Voltage for IGBT Gate Driving| V B(U)
V B(V)
V B(W)|
20
|
V
| Voltage that can be applied between U-VB(U), V-VB(V), W-VB(W) terminal
Input Signal Voltage| V IN| -0.5 ~ V CCH+0.5
-0.5 ~ V CCL+0.5| V| Voltage that can be applied between IN()-COM terminal
Input Signal Current| I IN| 3| mA| Maximum input current that flows from
IN() to COM terminal
Fault Signal Voltage| V FO| -0.5 ~ V CCL+0.5| V| Voltage that can be
applied between COM and VFO terminal
Fault Signal Current| I FO| 1| mA| Sink current that flows from VFO to COM
terminal
Over Current Sensing Input Voltage| V IS| -0.5 ~ V CCL+0.5| V| Voltage
that can be applied between IS and COM terminal
Maximum Junction Temperature of Control Circuit Block| T vj| +150| °C|
Maximum junction temperature of the control circuit block
Operating Case Temperature| T c| -40 ~ +125| °C| Operating case temperature
(temperature of the aluminum plate directly under the IGBT or the FWD)
Storage Temperature| T stg| -40 ~ +125| °C| Range of ambient temperature
for storage or transportation, when there is no electrical load
Isolation Voltage| V iso| AC 1500| Vrms| Maximum effective value of the
sine-wave voltage between the terminals and the heat sink, when all terminals
are shorted simultaneously. (Sine wave = 60Hz / 1min)
< Absolute Maximum Rating of Collector-Emitter Voltage>
The absolute maximum rating of Collector-Emitter voltage of the IGBT is
specified below.
During operation of the Small IPM, the voltage between P-N(U, V, W) is usually
applied to one phase of upper or lower side IGBT. Therefore, the voltage
applied between P-N(U, V, W) must not exceed the absolute maximum ratings of
IGBT. The absolute maximum rating is described below.
VCES： Absolute Maximum rating of IGBT Collector-Emitter Voltage.
VDC： DC bus voltage applied between P-N(U, V, W) .
VDC(Surge) ： The total of DC bus voltage and surge voltage generated by
the wiring (or pattern) inductance between P-N(U, V, W) terminal and bulk
capacitor. 
Fig. 1-7 shows example of (a) turn-off and (b) short-circuit waveforms.
The VDC(surge) is different in each situation, therefore VDC should be set
considering these situations.
VCES represents the absolute maximum rating of IGBT Collector-Emitter voltage.
VDC(Surge) is specified considering the margin of the surge voltage generated
by wiring inductance.
VDC is specified considering the margin of the surge voltage generated by
wiring (or pattern) stray inductance between the P-N(U, V, W) terminal and
bulk capacitor.
MT6M08855 a
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