DIODES SOT223 N-Channel Enhancement Mode Vertical Dmos Fet Owner’s Manual
- June 12, 2024
- DIODES
Table of Contents
**DIODES SOT223 N-Channel Enhancement Mode Vertical Dmos Fet Owner’s Manual
**
Product Summary
BV DSS | R DS(ON) | I D T A = +25°C |
---|---|---|
100V | 4Ω @ VGS= 10V | 500mA |
Description and Applications
This MOSFET is designed to minimize the on-state resistance and yet maintain superior switching performance, making it ideal for highefficiency power management applications.
- DC-DC Converters
- Solenoids / Relay Driver for Automotive
Features and Benefits
- 6A Pulse Drain Current
- Fast Switching Speed
- Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
- Halogen and Antimony Free. “Green” Device (Note 3)
- For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/
Mechanical Data
- Package: SOT223
- Package Material: Molded Plastic, UL Flammability Classification Rating 94V-0
- Moisture Sensitivity: Level 1 per J-STD-020
- Terminals: Finish – Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208
- Weight: 0.112 grams (Approximate)
SOT223 (Type DN)
Top View
Pin Out – Top View
Equivalent Circuit
Ordering Information (Note 4)
Part Number | Case | Packaging |
---|---|---|
ZVN2110GTA | SOT223 (Type DN) | 1,000/Tape & Reel |
Notes
- EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied.
- See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, “Green” and Lead-free.
- Halogen- and Antimony-free “Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.
- For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodespackaging/.
Marking Information
- ZVN2110 = Product Type Marking Code
- YWW = Date Code Marking
- Y or Y = Last Digit of Year (ex: 1= 2021)
- WW or WW = Week Code (01~53)
Maximum Ratings (@TA = +25°C, unless otherwise stated.)
Characteristic | Symbol | Value | Unit |
---|---|---|---|
Drain-Source Voltage | VDSS | 100 | V |
Gate-Source Voltage | VGSS | ±20 | V |
Continuous Drain Current | ID | 500 | mA |
Pulsed Drain Current | IDM | 6 | A |
Power Dissipation | PD | 2 | W |
Operating and Storage Temperature Range | TJ, TSTG | -55 to +150 | °C |
Electrical Characteristics (@TA = +25°C, unless otherwise stated.)
Characteristic| Symbol| Min| Typ| Max| Unit|
Test Condition
---|---|---|---|---|---|---
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage| BVDSS| 100| –| –| V| VGS = 0V, ID = 1mA
Zero Gate Voltage Drain Current| IDSS| –| –| 1100| µA µA| VDS = 100V, VGS = 0V
VDS = 80V, VGS = 0V, T=+125°C(6)
Gate-Body Leakage| IGSS| –| 0.1| 20| nA| VGS = ±20V, VDS = 0V
On-State Drain Current (Note 5)| ID(ON)| 1.5| 2| –| A| VGS = 10V, VDS = 25V
ON CHARACTERISTICS
Gate-Source Threshold Voltage| VGS(TH)| 0.8| –| 2.4| V| VDS = VGS, ID = 1mA
Static Drain-Source On-State Resistance (Note 5)| RDS(ON)| –| –| 4| Ω| VGS =
10V, ID =1A
Forward Transconductance (Notes 5 & 6)| gfs| 250| 350| –| mS| VDS = 25V, ID =
1A
DYNAMIC CHARACTERISTICS
Input Capacitance (Note 6)| Ciss| –| 59| 75| pF| VDS = 25V, VGS = 0V, f =
1.0MHz
Common Source Output Capacitance (Note 6)| Coss| –| 16| 25| pF
Reverse Transfer Capacitance (Note 6)| Crss| –| 4| 8| pF
Turn-On Delay Time (Notes 6 & 7)| tD(ON)| –| 4| 7| ns| VDD = 25V, ID = 1A
Rise Time (Notes 6 & 7)| tR| –| 4| 8| ns
Turn-Off Delay Time (Notes 6 & 7)| tD(OFF)| –| 8| 13| ns
Fall Time (Notes 6 & 7)| tF| –| 8| 13| ns
Drain-source Diode Characteristics
Characteristic| Symbol| Min| Typ| Max| Unit|
Test Condition
---|---|---|---|---|---|---
Diode Forward Voltage (Note 5)| VSD| –| 0.82| –| V| IS=0.32A, VGS=0
Reverse Recovery Time| TRR| –| 112| –| ns| IF=0.32A, VGS=0, IR=0.1A
Notes
- Measured under pulsed conditions. Width=300µs. Duty cycle 2%.
- Sample test.
- Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator
TYPICAL CHARAC TERITICE
Package Outline Dimensions
Please see https://www.diodes.com/design/support/packaging/diodes-packaging/ for the latest version.
SOT223 (Type DN)
Dim| Min| Max| Typ
A| —| 1.70| —
A1| 0.01| 0.15| —
A2| 1.50| 1.68| 1.60
b| 0.60| 0.80| 0.70
b2| 2.90| 3.10| —
c| 0.20| 0.32| —
D| 6.30| 6.70| —
E| 6.70| 7.30| —
E1| 3.30| 3.70| —
e| —| —| 2.30
e1| —| —| 4.60
L| 0.85| —| —
All Dimensions in mm
Suggested Pad Layout
Please see https://www.diodes.com/design/support/packaging/diodes-packaging/ for the latest version.
Dimensions | Value (in mm) |
---|---|
C | 2.30 |
C1 | 6.40 |
X | 1.20 |
X1 | 3.30 |
Y | 1.60 |
Y1 | 1.60 |
Y2 | 8.00 |
IMPORTANT NOTICE
- DIODES INCORPORATED AND ITS SUBSIDIARIES (“DIODES”) MAKE NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO ANY INFORMATION CONTAINED IN THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
- The Information contained herein is for informational purpose only and is provided only to illustrate the operation of Diodes products described herein and application examples. Diodes does not assume any liability arising out of the application or use of this document or any product described herein. This document is intended for skilled and technically trained engineering customers and users who design with Diodes products. Diodes products may be used to facilitate safety-related applications; however, in all instances customers and users are responsible for (a) selecting the appropriate Diodes products for their applications, (b) evaluating the suitability of the Diodes products for their intended applications, (c) ensuring their applications, which incorporate Diodes products, comply the applicable legal and regulatory requirements as well as safety and functional-safety related standards, and (d) ensuring they design with appropriate safeguards (including testing, validation, quality control techniques, redundancy, malfunction prevention, and appropriate treatment for aging degradation) to minimize the risks associated with their applications.
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- While efforts have been made to ensure the information contained in this document is accurate, complete and current, it may contain technical inaccuracies, omissions and typographical errors. Diodes does not warrant that information contained in this document is error-free and Diodes is under no obligation to update or otherwise correct this information. Notwithstanding the foregoing, Diodes reserves the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes.
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Copyright © 2021 Diodes Incorporated
ZVN2110G
Document number: DS33350 Rev. 5 – 2
December 2021
© Diodes Incorporated
References
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