DIODES SOT223 N-Channel Enhancement Mode Vertical Dmos Fet Owner’s Manual
- June 12, 2024
- DIODES
Table of Contents
**DIODES SOT223 N-Channel Enhancement Mode Vertical Dmos Fet Owner’s Manual
**
Product Summary
| BV DSS | R DS(ON) | I D T A = +25°C |
|---|---|---|
| 100V | 4Ω @ VGS= 10V | 500mA |
Description and Applications
This MOSFET is designed to minimize the on-state resistance and yet maintain superior switching performance, making it ideal for highefficiency power management applications.
- DC-DC Converters
- Solenoids / Relay Driver for Automotive
Features and Benefits
- 6A Pulse Drain Current
- Fast Switching Speed
- Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
- Halogen and Antimony Free. “Green” Device (Note 3)
- For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/
Mechanical Data
- Package: SOT223
- Package Material: Molded Plastic, UL Flammability Classification Rating 94V-0
- Moisture Sensitivity: Level 1 per J-STD-020
- Terminals: Finish – Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208
- Weight: 0.112 grams (Approximate)
SOT223 (Type DN)
Top View
Pin Out – Top View
Equivalent Circuit
Ordering Information (Note 4)
| Part Number | Case | Packaging |
|---|---|---|
| ZVN2110GTA | SOT223 (Type DN) | 1,000/Tape & Reel |
Notes
- EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied.
- See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, “Green” and Lead-free.
- Halogen- and Antimony-free “Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.
- For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodespackaging/.
Marking Information
- ZVN2110 = Product Type Marking Code
- YWW = Date Code Marking
- Y or Y = Last Digit of Year (ex: 1= 2021)
- WW or WW = Week Code (01~53)
Maximum Ratings (@TA = +25°C, unless otherwise stated.)
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Drain-Source Voltage | VDSS | 100 | V |
| Gate-Source Voltage | VGSS | ±20 | V |
| Continuous Drain Current | ID | 500 | mA |
| Pulsed Drain Current | IDM | 6 | A |
| Power Dissipation | PD | 2 | W |
| Operating and Storage Temperature Range | TJ, TSTG | -55 to +150 | °C |
Electrical Characteristics (@TA = +25°C, unless otherwise stated.)
Characteristic| Symbol| Min| Typ| Max| Unit|
Test Condition
---|---|---|---|---|---|---
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage| BVDSS| 100| –| –| V| VGS = 0V, ID = 1mA
Zero Gate Voltage Drain Current| IDSS| –| –| 1100| µA µA| VDS = 100V, VGS = 0V
VDS = 80V, VGS = 0V, T=+125°C(6)
Gate-Body Leakage| IGSS| –| 0.1| 20| nA| VGS = ±20V, VDS = 0V
On-State Drain Current (Note 5)| ID(ON)| 1.5| 2| –| A| VGS = 10V, VDS = 25V
ON CHARACTERISTICS
Gate-Source Threshold Voltage| VGS(TH)| 0.8| –| 2.4| V| VDS = VGS, ID = 1mA
Static Drain-Source On-State Resistance (Note 5)| RDS(ON)| –| –| 4| Ω| VGS =
10V, ID =1A
Forward Transconductance (Notes 5 & 6)| gfs| 250| 350| –| mS| VDS = 25V, ID =
1A
DYNAMIC CHARACTERISTICS
Input Capacitance (Note 6)| Ciss| –| 59| 75| pF| VDS = 25V, VGS = 0V, f =
1.0MHz
Common Source Output Capacitance (Note 6)| Coss| –| 16| 25| pF
Reverse Transfer Capacitance (Note 6)| Crss| –| 4| 8| pF
Turn-On Delay Time (Notes 6 & 7)| tD(ON)| –| 4| 7| ns| VDD = 25V, ID = 1A
Rise Time (Notes 6 & 7)| tR| –| 4| 8| ns
Turn-Off Delay Time (Notes 6 & 7)| tD(OFF)| –| 8| 13| ns
Fall Time (Notes 6 & 7)| tF| –| 8| 13| ns
Drain-source Diode Characteristics
Characteristic| Symbol| Min| Typ| Max| Unit|
Test Condition
---|---|---|---|---|---|---
Diode Forward Voltage (Note 5)| VSD| –| 0.82| –| V| IS=0.32A, VGS=0
Reverse Recovery Time| TRR| –| 112| –| ns| IF=0.32A, VGS=0, IR=0.1A
Notes
- Measured under pulsed conditions. Width=300µs. Duty cycle 2%.
- Sample test.
- Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator
TYPICAL CHARAC TERITICE
Package Outline Dimensions
Please see https://www.diodes.com/design/support/packaging/diodes-packaging/ for the latest version.
SOT223 (Type DN)
Dim| Min| Max| Typ
A| —| 1.70| —
A1| 0.01| 0.15| —
A2| 1.50| 1.68| 1.60
b| 0.60| 0.80| 0.70
b2| 2.90| 3.10| —
c| 0.20| 0.32| —
D| 6.30| 6.70| —
E| 6.70| 7.30| —
E1| 3.30| 3.70| —
e| —| —| 2.30
e1| —| —| 4.60
L| 0.85| —| —
All Dimensions in mm
Suggested Pad Layout
Please see https://www.diodes.com/design/support/packaging/diodes-packaging/ for the latest version.
| Dimensions | Value (in mm) |
|---|---|
| C | 2.30 |
| C1 | 6.40 |
| X | 1.20 |
| X1 | 3.30 |
| Y | 1.60 |
| Y1 | 1.60 |
| Y2 | 8.00 |
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Copyright © 2021 Diodes Incorporated
ZVN2110G
Document number: DS33350 Rev. 5 – 2
December 2021
© Diodes Incorporated