Avnet SILICON CARBIDE SOLUTIONS SELECTOR User Guide
- June 5, 2024
- AVNET
Table of Contents
SILICON CARBIDE SOLUTIONS SELECTOR
User Guide
SIC TECHNOLOGY SOLUTIONS YOU CAN TRUST
Clean, efficient energy and electric mobility drive demand for new power
semiconductor solutions like silicon carbide (SiC).
Most of the applications surrounding us today are based on silicon (Si). But
those applications call for advances in efficiency, power density, and new
ways to overcome silicon’s performance limitations. SiC technology has reached
the tipping point. Today, designers looking to stay competitive and lower
long-term system costs are turning to SiC-based technologies.
SiC could be the answer to some of your design challenges by providing more
energy from clean resources. Among the most popular applications using SiC
technology today are energy storage systems, electric vehicle charging, main
inverters, and electric drivetrain.
Learn more about Infineon’s SiC portfolio, which includes CoolSICTM Schottky
diodes, CooISiCTM hybrid devices, CooISiCTM MOSFETs, and Driving CooISiCTM
with EiceDRIVER.
Infineon CooISiCTM solutions maximize competitive advantage by reducing costs,
overcoming design challenges, and boosting performance reliability.
STAY COMPETITIVE WITH COOLSIC™
Our experienced experts help you stay competitive and reduce long-term system costs.
RESOURCES FOR COOLSIC™ BY APPLICATION
DOWNLOAD Includes whitepapers, application brochures and guides, a microlearning gallery, and product guides
ELECTRIC VEHICLE(EV)
CHARGING| ENERGY STORAGE
SYSTEMS(ESS)| INDUSTRIAL DRIVES| SWITCH MODE POWER
SUPPLY (SMPS) FOR
INDUSTRY| AUTOMOTIVE POWERTRAIN
---|---|---|---|---
CoolSiC™ MOSFETs
reduce charging time by half at the same charging station and footprint. One
1200 V SiC MOSFET is sufficient to support a DC-link voltage of 800 V.
Doubling the power density allows a component count reduction of a comparable
Si solution by 50% thanks to doubled voltage in the switch positions.|
CoolSiC™ MOSFET
650 V and 1200 V are cutting losses by 50% for extra energy. As the battery
bank makes up the major portion of the total system costs for Energy Storage
Systems, a change from silicon
super junction MOSFET to
CoolSiC™ MOSFET can lead to approximately 2% extra energy without increasing
battery size.| CoolSiC™ MOSFET powers the next generation of servo drive
design. Up to 80% loss reduction compared to Si IGBT solution is possible
thanks to the resistive behavior of SiC MOSFET and the load profile of servos
is a perfect match.| CoolSiC™, CoolMOS
™ and EiceDRIVER™
for energy-smart SMPS designs combine with industrial applications like
telecom datacenter. Industrial SMPS are driven by the trends of improved
energy efficiency,
high power density, and ever-growing output power. Wide-bandgap materials
enable the move to high-performance topologies.| Demand for SiC-based power
electronics for xEV main inverters are accelerating, especially true in
premium car
market segments. 1200 V
CoolSiC™ MOSFETs implemented in the electric
powertrain enables a system
size-reduction by up to 80%
thanks to the higher power
density, less cooling effort
and lower number of passive
components.
INFINEON’S COOLSIC™ PORTFOLIO
CONTACT US for technical support
TEST SIC FUNCTIONALITIES WITH OUR EVAL KIT
Register to win an entry-level evaluation kit (EVAL-1ED3122MC12H-SiC) for
testing SiC functionalities. The board is developed in partnership with
Infineon and is available only from Avnet.
THE EVAL-1ED3122MC12H-SIC BOARD IS:
- Ready for Infineon CoolSiC™ MOSFETs in half-bridge configuration.
- Able to evaluate CoolSiC MOSFETs 650V or 1200V.
- Optimized for onboard isolated gate drivers with the isolated power supply to provide required voltages.
EVALPSSICDPMAINTOBO1 – Infineon – EVAL BOARD, MOSFET GATE DRIVER ROHS COMPLIANT: YES (newark.com)
COOLSIC™ MOSFET 1200 V EVALUATION PLATFORM
The CoolSiC™️ MOSFET 1200 V evaluation platform including EiceDRIVER™ gate
driver IC was developed to show the driving options of the silicon carbide
CoolSiC™ MOSFET in TO247 3-pin and 4-pin. To show these options, the design
was split into this motherboard and currently, two drive cards. The modular
approach was chosen to allow the platform to be expanded with new drive cards
in the future. The motherboard was designed for a maximum voltage of 800 V and
a maximum pulsed current of 130 A.
More drive cards with different driver ICs and CoolSiC™️ MOSFETs are planned.
EVALPSSICDPMAINTOBO1 – Infineon – EVAL BOARD, MOSFET GATE DRIVER ROHS COMPLIANT: YES (newark.com)
EICEDRIVER™ 1ED-X3 ANALOG 1ED3491MU12M
The design of the EVAL-1ED3491Mx12M was performed with respect to the
environmental conditions described in this document.
The design was tested as described in this document, but not qualified
regarding manufacturing, lifetime, or over the full range of operating
conditions. The boards provided by Infineon are not subject to full production
tests.
WHY INFINEON
ABOUT AVNET
Avnet is a global electronic components distributor with extensive design,
product, marketing, and supply chain expertise for customers and suppliers at
every stage of the product lifecycle. For the past 100 years, Avnet has helped
its customers and suppliers around the world realize the transformative
possibilities of technology.
Learn more about Avnet at www.avnet.com/apac
Contact information
North America
2211 S 47th Street
Phoenix, Arizona 85034
United States of America
1-800-585-1602| Europe (Silica)
Gruber Str. 60c
85586 Poing
Germany
+49-8121-77702| Europe (EBV)
I’m Technology park 2-8
85586 Poing
Germany
http://ebv.com/contact| Japan
Yebisu Garden Place Tower, 23F
4-20-3 Ebisu, Shibuya-ku
Tokyo 150-6023 Japan
eval-kits-jp@avnet.com
+81-(0)3-5792-8210| Asia
151 Lorong Chuan
06-03 New Tech Park
Singapore 556741
XilinxAPAC@avnet.com
+65-6580-6000
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Reduce costs with Infineon CoolSiC™
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