SILICON CARBIDE SOLUTIONS SELECTOR
User Guide

SIC TECHNOLOGY  SOLUTIONS YOU CAN TRUST

Clean, efficient energy and electric mobility drive demand for new power semiconductor solutions like silicon carbide (SiC).
Most of the applications surrounding us today are based on silicon (Si). But those applications call for advances in efficiency, power density, and new ways to overcome silicon’s performance limitations. SiC technology has reached the tipping point. Today, designers looking to stay competitive and lower long-term system costs are turning to SiC-based technologies.
SiC could be the answer to some of your design challenges by providing more energy from clean resources. Among the most popular applications using SiC technology today are energy storage systems, electric vehicle charging, main inverters, and electric drivetrain.
Learn more about Infineon’s SiC portfolio, which includes CoolSICTM Schottky diodes, CooISiCTM hybrid devices, CooISiCTM MOSFETs, and Driving CooISiCTM with EiceDRIVER.
Infineon CooISiCTM solutions maximize competitive advantage by reducing costs, overcoming design challenges, and boosting performance reliability.

STAY COMPETITIVE WITH COOLSIC™

Our experienced experts help you stay competitive and reduce long-term system costs.

RESOURCES FOR COOLSIC™ BY APPLICATION

DOWNLOAD Includes whitepapers, application brochures and guides, a microlearning gallery, and product guides

ELECTRIC VEHICLE(EV)
CHARGING| ENERGY STORAGE
SYSTEMS(ESS)| INDUSTRIAL DRIVES| SWITCH MODE POWER
SUPPLY (SMPS) FOR
INDUSTRY| AUTOMOTIVE POWERTRAIN
---|---|---|---|---
CoolSiC™ MOSFETs
reduce charging time by half at the same charging station and footprint. One 1200 V  SiC MOSFET is sufficient to support a DC-link voltage of 800 V. Doubling the power density allows a  component count reduction of a comparable Si solution by 50%  thanks to doubled voltage in the switch positions.| CoolSiC™ MOSFET
650 V and 1200 V are cutting losses by 50% for extra energy. As the  battery bank makes up the major portion of the total  system costs for  Energy Storage Systems, a change from silicon
super junction MOSFET to
CoolSiC™ MOSFET  can lead to approximately 2% extra energy without increasing battery size.| CoolSiC™ MOSFET powers the next generation of servo drive design. Up to 80% loss reduction compared to Si IGBT solution is possible thanks to the resistive behavior of SiC MOSFET and the load profile of servos is a perfect match.| CoolSiC™, CoolMOS
™ and EiceDRIVER™
for energy-smart SMPS designs combine with industrial applications like telecom datacenter. Industrial SMPS are driven by the trends of improved energy efficiency,
high power density, and ever-growing output power. Wide-bandgap materials enable the move to high-performance topologies.| Demand for SiC-based power
electronics for xEV main inverters are accelerating, especially true in premium car
market segments. 1200 V
CoolSiC™ MOSFETs implemented in the electric
powertrain enables a system
size-reduction by up to 80%
thanks to the higher power
density, less cooling effort
and lower number of passive
components.

INFINEON’S COOLSIC™ PORTFOLIO
CONTACT US for technical support

TEST SIC FUNCTIONALITIES WITH OUR EVAL KIT

Register to win an entry-level evaluation kit (EVAL-1ED3122MC12H-SiC) for testing SiC functionalities. The board is developed in partnership with Infineon and is available only from Avnet.
THE EVAL-1ED3122MC12H-SIC BOARD IS:

1. Ready for Infineon CoolSiC™ MOSFETs in half-bridge configuration.
2. Able to evaluate CoolSiC MOSFETs 650V or 1200V.
3. Optimized for onboard isolated gate drivers with the isolated power supply to provide required voltages.

EVALPSSICDPMAINTOBO1 – Infineon – EVAL BOARD, MOSFET GATE DRIVER ROHS COMPLIANT: YES (newark.com)

COOLSIC™ MOSFET 1200 V EVALUATION PLATFORM

The CoolSiC™️ MOSFET 1200 V evaluation platform including EiceDRIVER™ gate driver IC was developed to show the driving options of the silicon carbide CoolSiC™ MOSFET in TO247 3-pin and 4-pin. To show these options, the design was split into this motherboard and currently, two drive cards. The modular approach was chosen to allow the platform to be expanded with new drive cards in the future. The motherboard was designed for a maximum voltage of 800 V and a maximum pulsed current of 130 A.
More drive cards with different driver ICs and CoolSiC™️ MOSFETs are planned.

EVALPSSICDPMAINTOBO1 – Infineon – EVAL BOARD, MOSFET GATE DRIVER ROHS COMPLIANT: YES (newark.com)

EICEDRIVER™ 1ED-X3 ANALOG 1ED3491MU12M
The design of the EVAL-1ED3491Mx12M was performed with respect to the environmental conditions described in this document.
The design was tested as described in this document, but not qualified regarding manufacturing, lifetime, or over the full range of operating conditions. The boards provided by Infineon are not subject to full production tests.

SHOP BOARD

WHY INFINEON

ABOUT AVNET
Avnet is a global electronic components distributor with extensive design, product, marketing, and supply chain expertise for customers and suppliers at every stage of the product lifecycle. For the past 100 years, Avnet has helped its customers and suppliers around the world realize the transformative possibilities of technology.
Learn more about Avnet at www.avnet.com/apac

Contact information

North America
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Phoenix, Arizona 85034
United States of America
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85586 Poing
Germany
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85586 Poing
Germany
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+81-(0)3-5792-8210| Asia
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06-03 New Tech Park

Singapore 556741
[email protected]
+65-6580-6000
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