NXP RD772BJBTPL8EVB Battery Junction Box User Manual

NXP RD772BJBTPL8EVB Battery Junction Box

Document Information

current, contactor, shunt, accuracy, temperature
Abstract| This user manual targets the RD772BJBTPL8EVB board. It is a typical battery junction box (BJB) solution used in high-voltage battery management system (BMS). The RD772BJBTPL8EVB is part of the high-voltage BMS reference design offered by NXP.

Revision history

Important notice

IMPORTANT NOTICE: For engineering development or evaluation purposes only

NXP provides the product under the following conditions:

This evaluation kit is for use of ENGINEERING DEVELOPMENT OR EVALUATION PURPOSES ONLY. It is provided as a sample IC pre-soldered to a printed-circuit board to make it easier to access inputs, outputs and supply terminals. This evaluation board may be used with any development system or other source of I/O signals by connecting it to the host MCU computer board via off-the-shelf cables. This evaluation board is not a Reference Design and is not intended to represent a final design recommendation for any particular application. Final device in an application heavily depends on proper printed-circuit board layout and heat sinking design as well as attention to supply filtering, transient suppression, and I/O signal quality.

The product provided may not be complete in terms of required design, marketing, and or manufacturing related protective considerations, including product safety measures typically found in the end device incorporating the product. Due to the open construction of the product, it is the responsibility of the user to take all appropriate precautions for electric discharge. In order to minimize risks associated with the customers’ applications, adequate design and operating safeguards must be provided by the customer to minimize inherent or procedural hazards. For any safety concerns, contact NXP sales and technical support services.

WARNING: Lethal voltage and fire ignition hazard

The non-insulated high voltages that are present when operating this product, constitute a risk of electric shock, personal injury, death and/or ignition of fire. This product is intended for evaluation purposes only. It shall be operated in a designated test area by personnel qualified according to local requirements and labor laws to work with non-insulated mains voltages and high-voltage circuits. This product shall never be operated unattended.

Introduction

The RD772BJBTPL8EVB is a BJB reference design around two NXP MC33772C. The board is ideal to quickly prototyping the hardware and the software of a high- voltage BMS. This document describes the RD772BJBTPL8EVB features.

Getting to know the hardware

Board overview

• The RD772BJBTPL8EVB supports battery current measurement, contactor and fuse monitoring, isolation monitoring, and temperature measurement.
• The battery management unit (BMU) communicates and controls the two MC33772CTC1AE. These ICs provide the necessary features to fulfill the various measurements.
• Figure 2 presents the block diagram of the board and its interaction with the rest of the system.

Board features

The RD772BJBTPL8EVB offers the following features:

• Five positive high-voltage measurement inputs (up to +1000 V)
• Two bipolar high-voltage measurement inputs (from −1000 V to +1000 V)
• Isolation monitoring between high-voltage and low-voltage domains
• Redundant current measurement with a 100 μΩ shunt resistor (from −1500 A to +1500 A)
• Shunt resistor temperature estimation
• Pre-charge resistor temperature measurement with an external sensor
• Two EEPROMs for calibration data storage
• Galvanically isolated electrical transport protocol link (ETPL) for communication
• Printed-circuit board designed according to IEC 60664 (pollution degree 2, material group IIIa)

Kit featured components

• The Figure 3 lists the connectors and the LEDs available on the RD772BJBTPL8EVB.

Connectors

Table 1 lists the high-voltage connectors used for high-voltage measurement or isolation monitoring. Section 5 describes the associated cables.

Table 1. High-voltage connectors

• Table 2 to Table 5 describe the remaining connectors and their pinout.

Table 2. Power supply connector

Table 3. Communication connector

Table 4. Current emulation connector

Table 5. Pre-charge resistor temperature sensor connector

LEDs

Figure 3 highlights two LEDs:

• D1 (powered by the VCOM of the primary MC33772C)
• D4 (powered by the VCOM of the secondary MC33772C)

These components give information on the MC33772C operation mode. If an LED is on, the associated MC33772C is in active mode. If an LED is off, the integrated circuit is either unpowered, in reset, or in sleep.

Schematic, board layout, and bill of materials

• The schematic, board layout, and bill of materials for the RD772BJBTPL8EVB are available at http://www.nxp.com/rd772bjbtpl8evb.

Features description

Power supply

The RD772BJBTPL8EVB usually receives power from the BMU on the connector J12. The power supply must follow the characteristics described in Table 6.

Table 6. Power supply characteristics

Symbol| Parameter| Conditions| Min| Typ| Max| Unit
---|---|---|---|---|---|---
VT30| supply voltage|  | 11| 12| 13| V
IT30| supply current| RD772BJBTPL8EVB in normal mode; TPL communication active; all high-voltage switches enabled| –| 160| 200| mA
RD772BJBTPL8EVB not active| –| 20| –| mA

The BMU is in the low-voltage domain, whereas the BJB is in the high-voltage domain. Therefore, the RD772BJBTPL8EVB embeds an isolated DC-DC converter to power the MC33772C and the measurement circuitry. This converter is by default an industrial component. The designer must consider using an automotive DC-DC when the board is in an automotive environment.

Current measurement

• The RD772BJBTPL8EVB measures redundantly the battery current with a single shunt resistor.

Current measurement characteristics

• Table 7 describes the characteristics of the current measurement feature.

Table 7. Current measurement characteristics

Symbol| Parameter| Conditions| Min| Typ| Max| Unit
---|---|---|---|---|---|---
Rshunt| shunt resistor value|  | –| 100| –| µΩ
IBAT| battery current under measurement| measurement with shunt resistor| −1500| –| +1500| A
VISENSE| voltage on ISENSE inputs measurement| measurement with shunt resistor or with voltage across J5| −150| –| +150| mV
fISENSE-DIFF| current measurement filter cut‑off frequency| differential voltage; −3 dB attenuation| –| 600| –| Hz
fISENSE-COMM| current measurement filter cut‑off frequency| common-mode voltage; −3 dB attenuation| –| 26.7| –| kHz

Current measurement circuit description

The RD772BJBTPL8EVB provides a shunt resistor to measure the battery current (from the battery to the inverter or from the battery to the charger). Typically, the shunt resistor is on the high-voltage battery negative terminal. It serves as a ground for the high-voltage section of the RD772BJBTPL8EVB (MC33772C, measurement circuitry…).

Each MC33772C measures the voltage drop across the shunt resistor to bring redundancy. As the current measurement is bipolar, the user can link the ISENSE+ and ISENSE− measurements pins to any side of the shunt resistor.

• To ease the evaluation of the RD772BJBTPL8EVB, a connector (J5) is available in parallel of the shunt resistor.
• Then, a voltage source can replace a high-current source to validate the current measurement feature. Figure 4 describes the current measurement circuitry.

The resistors placement defines whether the two MC33772C measure the voltage drop across the shunt resistor or across the connector, as explained in Table 8.

Table 8. Resistor placement for current measurement

Resistor| Placement when using shunt resistor| Placement when using a voltage source on J5
---|---|---
R120| do not place| 0 Ω
R98| 0 Ω| do not place
R96| 0 Ω| do not place
R97| 0 Ω| do not place

Current measurement layout guideline

• The layout of the current measurement paths is compatible with the use of an external voltage source. Due to this option, both paths are dependent.
• In a real application, the current measurement paths must be independent. The connection points to the sense element of the shunt resistor have to be redundant as shown in Figure 5.

Current measurement conversion

After a current measurement, both MC33772C return a 19-bit signed value available in the registers MEAS_ISENSE1 and MEAS_ISENSE2. The microcontroller in the BMU computes the result following below equation:

Where

• IMEAS is the result of the current measurement in A
• MEAS_ISENSE is the result of the analog-to-digital converter (ADC) of the MC33772C (19-bit two’s complement signed value, status bit removed)
• V2RES is the resolution of the current measurement ADC in V/LSB (see MC33772C data sheet)
• RSHUNT is the value of the shunt resistor in Ω
  • If the current measurement uses the shunt, RSHUNT = 100 μΩ
  • If the current measurement uses the connector J5, RSHUNT = 1 and the result unit is V

High-voltage measurement

• The RD772BJBTPL8EVB measures several high voltages in the system. The BMU can compute the result and proceed, for instance, to contactor monitoring.

High-voltage measurement characteristics

• Table 9 describes the characteristics of the high-voltage measurement feature.

Table 9. High-voltage measurement characteristics

Symbol| Parameter| Conditions| Min| Typ| Max| Unit
---|---|---|---|---|---|---
VHV-MAX| maximum off-state voltage| high-voltage switch disabled| −1500| –| +1500| V
VHV+| positive voltage measurement range| high-voltage switch enabled| 0| –| 1000| V
VHV+/−| bipolar voltage measurement range| high-voltage switch enabled| −1000| –| +1000| V
ts| voltage measurement settling time|  | –| 5| –| ms
fHV+| positive voltage measurement cut-off frequency| −3 dB attenuation| –| 600| –| Hz
fHV−| bipolar voltage measurement cut-off frequency| −3 dB attenuation| –| 500| –| Hz

High-voltage measurement circuit description

• The RD772BJBTPL8EVB measures up to seven high voltages in the system.
• The five positive inputs typically monitor the voltage across the high side contactors and fuses (ex: contactor between battery positive terminal and inverter positive terminal). These inputs accept high-voltages meeting VHV+ (see Section 4.3.1). Two inputs can monitor the same point in order to provide redundancy and increase the overall safety integrity level.
• The two bipolar inputs typically monitor the voltage across the low side contactors (ex: contactor between battery negative terminal and charger negative terminal). These inputs accept high-voltages meeting VHV+/− (see Section 4.3.1).
• Figure 6 describes the circuitry of positive and bipolar high-voltage measurement paths.
• In order to reduce the leakage current in the resistors when there is no measurement, a high-voltage switch can disconnect the bridge. A MC33772C digital output and a level-shifter control this switch.
• A resistor bridge divides the high voltage down to the MC33772C input voltage range. The resistors forming RH must withstand the high voltage.
• For bipolar voltage measurement, a voltage reference shifts the output of the resistor bridge to half of the MC33772C input voltage range.
• An analog antialiasing filter improves the noise performance. Due to the filter and the switch circuitry response time, the BMU must wait ts before starting a voltage measurement (see Section 4.3.1).
• The MC33772C measures the divided voltage. To improve the accuracy, the user should configure the analog input as a single-ended input.
• Table 10 describes the allocation of the MC33772C inputs and outputs for high-voltage measurement.

Table 10. High-voltage measurement channel allocation

High-voltage switch control signal| High-voltage measurement| MC33772C measurement input
---|---|---
Primary GPIO4| primary DCLINK_POS| primary CT1
DCLINK_FUSE| primary GPIO2
DCLINK_NEG| primary GPIO0
Secondary GPIO4| CHARGER_POS| secondary GPIO1
CHARGER_NEG| primary GPIO1
Secondary GPIO5| secondary DCLINK_POS| secondary CT1
CHARGER_FUSE| secondary GPIO2

High-voltage measurement conversion

After a voltage measurement, the MC33772C returns a 15-bit signed value available in the register MEAS_ANx or MEAS_CT1 depending on the channel (see Table 10). The microcontroller in the BMU computes the result following below equations:

Where

• VHV is the result of the high-voltage measurement in V
• RL is the low-side resistor of the voltage divider in Ω (see Table 11)
• RH is the high-side resistor of the voltage divider in Ω (see Table 11)
• VREF is the voltage to which the voltage divider is referenced in V (see Table 11)
• VMEAS is the MC33772C input voltage, measured by the ADC, in V
• MEAS_XXX is the result of the ADC conversion (15-bit unsigned value, status bit removed)
• VCT_ANx_RES is the resolution of the ADC in V/LSB (see MC33772C data sheet)

Table 11 describes the conversion parameters depending on the type of measurement.

Table 11. Voltage conversion parameters

Parameter| Positive voltage measurement channel| Bipolar measurement channel
---|---|---
RL| 10 kΩ| 5.1 kΩ
RH| 2.01 MΩ| 2.01 MΩ
VREF| 0 V| 2.5 V

Adapting circuitry for low-voltage measurements

• Using a low-voltage source can ease the RD772BJBTPL8EVB evaluation. However, as the board typically measures high voltages, the user should adapt the circuitry.
• The simplest solution is to change the low-side resistor of the voltage divider (RL in Figure 6). By choosing a bigger resistor, the divider ratio increases, allowing to measure smaller voltages.
• The time constant of the antialiasing filter depends on the divider impedance. In order to keep the same cut-off frequency, the user should adapt the capacitor of the filter (CAAF in Figure 6) along with RL.
• Table 12 presents typical values for RL and CAAF to measure low voltage. Following these values ensures meeting the MC33772C measurement range.

Table 12. Component values to measure low voltage

Low voltage to measure| Positive measurement channel| Bipolar measurement channel
---|---|---
R L| C AAF| R L| C AAF
+12 V| 1.3 MΩ| 470 pF| 620 kΩ| 1 nF
+24 V| 470 kΩ| 1 nF| 240 kΩ| 2.2 nF
+48 V| 220 kΩ| 2.2 nF| 100 kΩ| 4.4 nF

The user must clearly identify the modified RD772BJBTPL8EVB. Applying high voltage to a modified board can lead to injuries and permanent damage to the board.

Isolation monitoring

The RD772BJBTPL8EVB is in between the low-voltage section (car chassis, +12 V battery) and the high‑voltage section (high-voltage battery, inverter) of the car. The board embeds the circuitry to monitor the isolation between the two sections. It helps detecting any isolation failure that could put the car user in danger.

Isolation monitoring characteristics

Table 13 describes the characteristics of the isolation monitoring feature.

Table 13. Isolation measurement characteristics

Symbol| Parameter| Conditions| Min| Typ| Max| Unit
---|---|---|---|---|---|---
VChassis-MAX| maximum chassis off-state voltage| high-voltage switch disabled| −3000| –| +3000| V
ts| voltage measurement settling time|  | –| 10| –| ms

Isolation monitoring circuit description

• Figure 8 describes the isolation monitoring circuitry.

This feature aims to evaluate the value of the equivalent resistance between:

• • The battery positive terminal and the chassis (RISO+)
  • The battery negative terminal and the chassis (RISO−)

A high-voltage switch (SW3) connects the chassis to the circuit prior doing the measurement. As the measurement resistors are high enough, closing SW3 does not lead to an isolation failure and does not put the car user in danger. Another high-voltage switch (SW1) disconnects the resistor bridge to reduce the leakage current on the high‑voltage battery when there is no measurement. The circuit has to measure two resistors (RISO+ and RISO−). Two voltage measurements are necessary to solve this two-unknown equation. The first measurement involves R1, R2, and RL. Enabling R3 (with SW2) allows getting a second voltage measurement. Section 4.4.3 describes the measurement sequence.

The output voltage (VSENSE) depends on the measurement circuitry (R1, R2, RL, and R3 if enabled), the battery voltage, and the isolation resistors. The MC33772C measures this voltage. To improve the accuracy, the user should configure the analog input as a single-ended input.

Table 14 describes the allocation of the MC33772C inputs and outputs for isolation monitoring.

Table 14. Isolation monitoring channel allocation

• Due to the switch circuitry response time, the BMU must wait ts before starting each voltage measurement (see Section 4.4.1).
• After running the sequence, the BMU computes the voltage measurements to determine the isolation resistors as explained in Section 4.4.4.

Isolation monitoring sequence

Table 15 describes the steps of the isolation monitoring sequence.

Table 15. Isolation monitoring sequence

the result VBAT
3| close SW3
4| close SW1
5| wait ts (see Section 4.4.1)
6| measure VSENSE
7| convert the voltage measurement (as explained in Section 4.4.4); name the result V1
8| close SW2
9| wait ts (see Section 4.4.1)
10| measure VSENSE
11| convert the voltage measurement (as explained in Section 4.4.4); name the result V2
12| open SW1, SW2, and SW3
13| to calculate the isolation resistors, compute the VBAT, V1, and V2 (as explained in Section 4.4.4)

Isolation monitoring conversion

During the isolation monitoring sequence, the MC33772C proceeds to voltage measurements. The IC returns a 15-bit signed value available in the register MEAS_ANx. The microcontroller in the BMU computes the result in V following below equation:

Where

• VMEAS is the MC33772C input voltage, measured by the ADC, in V
• MEAS_XXX is the result of the ADC conversion (15-bit unsigned value, status bit removed)
• VCT_ANx_RES is the resolution of the ADC in V/LSB (see MC33772C data sheet)

Once the sequence is over, the BMU computes the measurements to calculate the isolation resistors. To ease the calculation, the formula uses the conductance instead of the resistance. Below equation describes the relationship between resistance and conductance.

Where

• YX is the conductance in S
• RX is the resistance in Ω

The formula expressing the isolation resistances in function of the measurements is as follows:

Where:

• YISO+ is the conductance of the positive isolation resistance in S
• YISO- is the conductance of the negative isolation resistance in S
• VBAT is the converted high-voltage measurement of the battery in V
• V1 is the first converted voltage measurement of the sequence in V
• V2 is the second converted voltage measurement of the sequence in V
• YL, Y1, Y2, and Y3 are the conductances of the measurement resistors in S

Table 16 describes the conversion parameters of the RD772BJBTPL8EVB.

Table 16. Isolation measurement conversion parameters

Temperature measurement

• The RD772BJBTPL8EVB measures up to two temperatures with negative temperature coefficient (NTC) resistors.
• The board embeds one sensor close to the shunt resistor. It allows estimating the shunt resistor temperature in order to proceed to temperature compensation of the current measurement.
• The board offers the possibility to use an external NTC. This sensor could measure, for instance, the pre-charge resistor temperature.

Temperature measurement characteristics

• Table 17 describes the characteristics of the temperature measurement feature.

Table 17. Temperature measurement characteristics

Symbol| Parameter| Conditions| Min| Typ| Max| Unit
---|---|---|---|---|---|---
RNTC-board| onboard NTC resistor| value at 25 °C (B57232V5103F360, TDK)| –| 10| –| kΩ
RNTC-ext| external NTC resistor| value at 25 °C| –| 10| –| kΩ

Temperature measurement circuit description

• Figure 9 describes the temperature measurement circuitry.

The regulated output voltage of the MC33772C (VCOM) powers the voltage divider with the NTC resistor. To improve the accuracy of the measurement, the user should configure the analog input as ratiometric input.
Table 18 describes the allocation of the MC33772C inputs for temperature measurement.

Table 18. Temperature measurement channel allocation

Temperature measurement conversion

After a temperature measurement, the MC33772C returns a 15-bit signed value available in the register MEAS_ANx. The microcontroller in the BMU computes the NTC resistor value following below equation:

Where:

• RNTC is the result of the NTC resistor measurement in Ω
• R1 is the pullup resistor, R1 = 6.8 kΩ in the RD772BJBTPL8EVB
• MEAS_ANx is the result of the ADC measurement (15-bit unsigned value, status bit removed)

After computing the NTC resistor value, the BMU can calculate the temperature with below equation:

Where

• T is the result of the temperature measurement in K
• RNTC is the NTC resistor measurement in Ω
• β in K, T0 in K, and R0 in Ω are the NTC parameters available in the NTC data sheet

Communication

The RD772BJBTPL8EVB communicates with the BMU with ETPL. A transformer galvanically isolates both boards. The ETPL lines between the two MC33772C do not require isolation as the two IC share the isolated ground. The MC33772C data sheet describes the required circuitry for the communication.

Kit accessories

Table 19. Available kit accessories

Table 19. Available kit accessories

References

1. Data sheet MC33772C http://www.nxp.com/MC33772C

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Date of release: 2 May 2023
Document identifier: UM11847

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References

• MC33772C | 6-Channel Li-Ion Battery Cell Controller IC | NXP Semiconductors

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