ABB 5SYA2135-00 SEMIS Simulation Tool Diode Based EV Charging Converters User Manual

ABB 5SYA2135-00 SEMIS Simulation Tool Diode Based EV Charging Converters

Product Information

The SEMIS Simulation Tool Diode Based EV Charging Converters is a web-based semiconductor simulation tool that provides a thermal calculation of the semiconductor losses for common converter circuits. It simplifies the selection of the switching device and enables the optimal selection of semiconductors for further investigations. The tool is user-friendly and is found on ABB Semiconductors’ website. There is a substantial selection of topologies to choose from, and users can select multiple ABB products to be simulated at the same time. Once a simulation is run, SEMIS returns comprehensive results on semiconductor losses and electrical parameters in the input and output of the circuit, shown in graphical and numerical ways. The tool is based on the PLECS simulation software, and ABB offers customized converter simulations for non-standard topologies with PLECS simulation software on a project basis.

Product Usage

To use the SEMIS Simulation Tool Diode Based EV Charging Converters, follow these steps:

1. Go to the ABB Semiconductors website and find the SEMIS Simulation Tool.
2. Select the desired topology for your simulation.
3. Assign the circuit parameters and select the desired switching device.
4. Select multiple ABB products to be simulated at the same time.
5. Run the simulation and wait for SEMIS to return comprehensive results on semiconductor losses and electrical parameters in the input and output of the circuit, shown in graphical and numerical ways.
6. Use the results to optimize your selection of semiconductors for further investigations.

Note: ABB offers customized converter simulations for non-standard topologies with PLECS simulation software on a project basis.

INTRODUCTION

• SEMIS is a web-based semiconductor simulation tool providing a thermal calculation of the semiconductor losses for common converter circuits. The simulation simplifies significantly the selection of the switching de-vice and enables the optimal selection of semiconductors for further investigations. The SEMIS Simulation Tool is a user-friendly online application found on ABB Semiconductors website www.abb.com/semi-conductors/semis
• SEMIS users select from a substantial selection of topologies. By assigning the circuit parameters and selecting the desired switching device, multiple ABB products can be simulated at the same time. Once a simulation is run, SEMIS returns compre-hensive results on semiconductor losses as well as on the electrical parameters in the input and output of the circuit. The re-sults are shown in both graphical (waveforms) and numerical (tables) way.
• The SEMIS tool is based on the PLECS simulation software. PLECS users can download our product models in the XML file format from the ABB Semiconductors website and use them for their simulations. For more specific topologies ABB offers cus-tomized converter simulations for non-standard topologies with PLECS simulation software on a project basis.

COPYRIGHTS
All rights to copyrights, registered trademarks, and trademarks reside with their respective owners. Copyright © 2019 ABB Power Grids Switzerland Ltd.
All rights reserved.
Release: April 2020
Document number: 5SYA 2135

DIODE BASED EV CHARGING CONVERTERS

Electric vehicle chargers are typical AC-DC converters based on diodes, IGBTs or thyristors at the first stage and DC- DC converters at the second stage to suit the battery charging voltage and to improve the power quality. The first stage of the converters used in this model is diode-based:

• 1 phase diode bridge rectifier
• 3 phase diode bridge rectifier

The DC-DC converters used are non-isolated:

• Buck converter
• Boost converter.

ABB offers the following power electronic topologies for thermal analysis simulation in Diode based EV charging converters

• 1 phase diode bridge rectifier + Buck converter: Domestic low voltage single phase of 230V is stepped down to values as low as 30V
• 3 phase diode bridge rectifier + Boost converter: Domestic low voltage three-phase voltage of 415V is stepped up to 1kV DC.

OVERVIEW

SIMULATION SETTINGS

Rectifier settings
The user can choose between the 2 types of rectifiers that are mentioned in section 3.1.1. The user may input the RMS value of the AC voltage per phase for both 3 phase and 1 phase source. The supply frequency can be changed – this usually is either 50Hz or 60Hz.

Converter settings
The user can choose between the 2 types of converters here. The user shall select the buck converter for stepping down the output voltage of the rectifier. The user shall select boost operation if the output voltage of the rectifier must be stepped-up. These converters are modeled to operate in Continuous Conduction Mode (CCM), one shall change the user inputs as shown in Figure 3 Converter settings input blocks to operate the converters in CCM.

IGBT settings

Heat Sink Thermal Resistance
Range 0.0001 .. 0.5 K/W
Definition of thermal resistance of the cooling system applied.

Remark:
The value entered is attributed to each individual switch is shown in the electrical configuration schematic of the IGBT module datasheet. Therefore, if a user selects a dual switch module, the Rth should be multiplied with a factor of 2 to differentiate from the single switch case, if the same heatsink would be used in both cases.
The selected Rth is also accounted for the diode position for which same consideration applies to its electrical configuration.

• IGBT module type Select housing type of IGBT for filtering Selection
• IGBT selection Select voltage class of IGBT for filtering Selection
• Module configuration Select topology of IGBT module for filtering Selection

Matching IGBTs
Once the previous IGBT properties are selected, the matching IGBT option appears. By clicking on the product code name the user may access the datasheet from the ABB website. Users can select the desired IGBTs product names for simulation.
Up to 4 elements can be selected simultaneously and simulated. If one or more elements produce results exceeding the safe operating area (SOA) then they will return no results. In this case, the user should run the simulation again with changed parameters and/or product selection to enable results within SOA operating conditions.

Matching Diodes
Once the IGBT’s are selected, the user can do the Rectifier Diodes selection for the front end rectifier based on the voltage rating chosen. By clicking on the product code name the user may access the datasheet from the ABB website.

Selection of articles / Start simulation
To simulate one or more articles, select from the list by activating the checkbox

• Simulate Starts the simulation
  The progress of the simulation is shown with a number of calculated Jacobian.

• Abort Stops the simulation; No results generated

• Hold results To compare multiple simulations, results can be held for later viewing By selecting the button, results are held after the simulation has finalized for later comparison with succeeding simulations

SIMULATION RESULTS
The simulation results are displayed in two different ways for all selected articles simulated.
To hide curves of selected articles, unselect in the table “Results History”

• Graphical results Visual analysis of waveforms for fast and efficient detection of most significant sources
• Numerical results Numeric indication of all simulations values for direct comparison

Graphical Output – Waveforms
When the simulation finishes the semiconductor and DC side waveforms are appearing as follows:

Control
For an indication of values within the graph, a cursor can be activated to show curve values in a table.
Sections of graphs can be zoomed in by click, move and release mouse button for more details

Parameters values indication
Tabular indication of graphical waveforms values according to the cursor position selected. Values are indicated for each parameter with the corresponding color of the waveform. The third column shows the difference between the two cursors per parameter.

Remark:
The numerical values of Phase Voltage/Current at the position of respective cursors are shown in the Table. The numerical values of IGBT current/Diode Current along with their Switching loss, Conduction loss, and Junction temperatures at the position of respective cursors are shown in the Table.

Numerical / Tabular results

• The following parameters are given in a tabular format in multiple sections. All calculations and simulation results are based on datasheet typical values.

• All types of semiconductor losses are calculated according to the PLEXIM PLECS software principle through the reference of the lookup table and linear interpolation of the actual device current, voltage, and junction tempera-ture.

• The losses per rectifier diode are tabulated. The rectifier losses are arrived at by multiplying the per rectifier losses by 4 and 6 for 1 phase rectifier topology and 3 phase rectifier topology respectively. The cumulative losses for the topology are calculated as the sum of the losses of the rectifier and the converter and tabulated under Converter Losses.

• Switching Loss Single IGBT or Diode Losses during turn on and turn off events (dynamic)

• Conduction loss Single IGBT or Diode Losses during on state (static)

• Combined losses Sum of single IGBT or Diode switching and conduction loss.

• Converter losses Sum of all IGBT and Diode losses

• % Losses Defined as the (%) ratio of calculated combined converter losses with respect to the total output power and losses i.e., total apparent power flow.

• Junction Temperature Avg Junction temperature average during the simulation period

• Junction Temperature Max Maximum junction temperature during the simulation period

• Junction Temperature BLS Junction temperature at the time point just before the switching, after which the maximum junction temperature is achieved

• Real power Active power supplied by the source including the thermal losses

• Phase Voltage (RMS) AC voltage per phase at the source

• Phase current (RMS) AC current drawn at the source by the load

• Input Frequency (Hz) Frequency of the source voltage

• Input DC power Active power supplied by the source including the thermal losses

• Output DC power Load power set by the user as explained in section 3.1.1.

• Input DC voltage DC voltage supplied at the input of the converter (Usually the output of a rectifier)

• Output DC voltage DC voltage output set by the user as explained in section 3.1.1.

• DC Current DC current is drawn by the load at the power set by the user.

• Duty ratio Duty ratio is calculated and displayed as per section 6.

• Switching Freq. According to the definition

• Ambient Temp. According to the definition

ALERTS & FEATURES

The system verifies results and generated warning messages in case of limits are violated.

• Parameter Junction temperature
• Verification If the average junction temperature of IGBT and/or diode is above its maximum junction temperature limit, the alert message is displayed
• Warning message I GBT temperature out of the safe operating area
• Parameter DC Blocking voltage
• Verification If the voltage rating of the IGBT and/or diode is less than the DC blocking voltage, the alert message is displayed
• Warning message For the selected device voltage rating, the operating range of the device is dis-played
• Parameter Duty ratio
• Verification Range of Duty ratio is 0 to 1. If the duty ratio is out of these limits and an alert message is displayed
• Warning message (s) -Output voltage should be less than the input voltage for Buck operation
  • Output voltage should be greater than the input voltage for Boost operation

APPLIED CALCULATIONS

Input Parameter Definitions

• VDC Input DC voltage/Rectifier output
• VOUT Output DC voltage
• Vph Single phase RMS voltage
• Pout Load power
• F_Hz AC side frequency (50/60Hz)
• Fc_Hz Control PWM switching frequency

DC output voltage of the Rectifier

Output capacitance of the rectifier
The output capacitance is designed based on the ripple percentage with reference to the peak voltage (VDC). The ripple factor is calculated as a product of ripple percentage which is considered as 1 %.

Duty ratio of the converter
The output of the rectifiers serves as input to the DC-DC converters. The following calculations have been used in the model to calculate the duty ratio:

Load side
The resistive load is formulated based on the following equations for each of the converters:

• POUT DC power / real power at the load
• D Duty cycle as per section 6.2
• Rout Resistive load of the converter

Design of the inductance for Continuous Conduction Mode (CCM) of the converter

Converter output smoothing capacitor expressions

VALIDATION OF PLECS RESULTS WITH PSCAD

• To ensure supplied simulation results are reliable, each of the Diode rectifier models in combination with either buck or boost on the secondary is validated with another simulation platform.
• The circuit topology is reconstructed in PSCAD to validate the results obtained from the SEMIS web simulation tool. The objective of the work is to develop a 2 pulse + buck, 2 pulses + boost, 6 pulses + buck, and 6 pulses + boost with loss and temperature estimation in PSCAD and to validate the steady-state results obtained through EV charging topology based on Diode web simulation model.
• Two different rectifier diode models and two different IGBTs have been chosen for the process of validation. The XML data of both these Diodes and IGBTs which were created from the device datasheets for SEMIS simulations is modified to individual .txt files for switch turn-on energy (Eon), switch turn-off energy (Eoff), diode reverse re-covery energy (Erec), on-state voltage drop of IGBT (Vt), and on state voltage drop of the diode (Vd) at different temperatures, to make the data readable in PSCAD.
• The PSCAD and SEMIS circuit models are made as identical as possible to prevent any errors in validation due to the dissimilarities. Junction to Case and Case to Heat sink thermal resistances for the Diodes and IGBTs have been captured from the device datasheet while the Heat sink to ambient thermal resistance Rth(h-a) is assumed as 2K/kW with different ambient temperatures.
• 3 cases each for the 4 topologies are simulated in PSCAD and SEMIS by varying different parameters like input phase voltage, device, Load current, Load power, Switching frequency, etc.

USER MANUAL REVISION HISTORY

SIMULATION SOFTWARE RELEASE HISTORY

Contact

ABB Power Grids Switzerland Ltd.
Semiconductors
Fabrikstrasse 3
5600 Lenzburg, Switzerland
Phone: +41 58 586 1419
Fax: +41 58 586 1306
E-Mail: abbsem@ch.abb.com
abb.com/semiconductors
Note
We reserve the right to make technical changes or modify the contents of this document without prior notice. With regard to purchase orders, the agreed particulars shall prevail. ABB does not accept any responsibility whatsoever for potential errors or possible lack of information in this document.
We reserve all rights in this document in the subject matter and illustrations contained therein. Any reproduction- in whole or in parts- is forbidden without ABB’s prior written consent.

References

• ABB Group. Leading digital technologies for industry — ABB Group
• ABB Group. Leading digital technologies for industry — ABB Group
• ABB Group. Leading digital technologies for industry — ABB Group

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