onsemi NVMFS3D6N10MCLT1G MOSFET Power Single N-Channel Instructions

June 9, 2024
onsemi

onsemi NVMFS3D6N10MCLT1G MOSFET Power Single N-Channel

onsemi NVMFS3D6N10MCLT1G MOSFET Power Single N-Channel-
fig1

Features

  • Small Footprint (5×6 mm) for Compact Design
  • Low RDS(on) to Minimize Conduction Losses
  • Low QG and Capacitance to Minimize Driver Losses
  • NVMFWS3D6N10MCL − Wettable Flank Option for Enhanced Optical Inspection
  • AEC−Q101 Qualified and PPAP Capable
  • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

MAXIMUM RATINGS

(TJ = 25°C unless otherwise noted)

Parameter Symbol Value Unit
Drain−to−Source Voltage VDSS 100 V
Gate−to−Source Voltage VGS ±20 V
Continuous Drain Current RSJC (Notes 1, 3) Steady State TC = 25°C ID

A
TC = 100°C| 84
Power Dissipation RSJC (Note 1)| Steady State| TC = 25°C| PD| 139| W
TC = 100°C| 56
Continuous Drain Current RSJA (Notes 1, 2, 3)| Steady State| TA = 25°C| ID| 20| A
TA = 100°C| 13
Power Dissipation RSJA (Notes 1, 2)| Steady State| TA = 25°C| PD| 3.2| W
TA = 100°C| 1.3
Pulsed Drain Current| TA = 25°C, tp = 10 µs| IDM| 888| A
Operating Junction and Storage Temperature Range| TJ, Tstg| − 55 to

+175

| °C
Source Current (Body Diode)| IS| 116| A
Single Pulse Drain−to−Source Avalanche Energy (IAS = 9.2 A)| EAS| 739| mJ
Lead Temperature for Soldering Purposes (1/8² from case for 10 s)| TL| 260| °C

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter Symbol Value Unit
Junction−to−Case − Steady State RSJC 0.9 °C/W
Junction−to−Ambient − Steady State (Note 2) RSJA 39
  1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted.
  2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
  3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle.|

onsemi NVMFS3D6N10MCLT1G MOSFET Power Single N-Channel-
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ORDERING INFORMATION

See detailed ordering, marking and shipping information in the package dimensions section on page 5 of this data sheet.

NVMFS3D6N10MCL

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)

Parameter| Symbol| Test Condition| Min| Typ| Max| Unit
---|---|---|---|---|---|---

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage| V(BR)DSS| VGS = 0 V, ID = 250 µA| 100|  | | V
---|---|---|---|---|---|---
Drain−to−Source Breakdown Voltage Temperature Coefficient| V(BR)DSS/ TJ|  |  | 60|  | mV/°C
Zero Gate Voltage Drain Current| IDSS| VGS = 0 V, VDS = 100 V| TJ = 25 °C|  | | 1.0| ****

µA

TJ = 125°C|  |  | 250
Gate−to−Source Leakage Current| IGSS| VDS = 0 V, VGS = 20 V|  |  | 100| nA

ON CHARACTERISTICS (Note 4)

Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 270 µA 1 1.5 3 V
Threshold Temperature Coefficient VGS(TH)/TJ     −5.0   mV/°C
Drain−to−Source On Resistance RDS(on) VGS = 10 V ID = 48 A   3.0 3.6

mQ

VGS = 4.5 V| ID = 39 A|  | 4.4| 5.8
Forward Transconductance| gFS| VDS =5 V, ID = 48 A|  | 163|  | S

CHARGES, CAPACITANCES & GATE RESISTANCE

Input Capacitance| CISS| ****

VGS = 0 V, f = 1 MHz, VDS = 50 V

|  | 4411|  | ****

pF

---|---|---|---|---|---|---
Output Capacitance| COSS|  | 1808|
Reverse Transfer Capacitance| CRSS|  | 29|
Total Gate Charge| QG(TOT)| VGS = 4.5 V, VDS = 50 V; ID = 48 A|  | 29|  | nC
Total Gate Charge| QG(TOT)| VGS = 10 V, VDS = 50 V; ID = 48 A|  | 60|  | nC
Threshold Gate Charge| QG(TH)| ****


VGS = 10 V, VDS = 50 V; ID = 48 A

|  | 6|  | ****

nC

Gate−to−Source Charge| QGS|  | 10|
Gate−to−Drain Charge| QGD|  | 7|
Plateau Voltage| VGP|  | 3|  | V

SWITCHING CHARACTERISTICS (Note 5)

Turn−On Delay Time| td(ON)|

VGS = 10 V, VDS = 50 V, ID = 48 A, RG = 6.0 Q

|  | 14.6|  |

ns

---|---|---|---|---|---|---
Rise Time| tr|  | 7|
Turn−Off Delay Time| td(OFF)|  | 62.3|
Fall Time| tf|  | 20.2|

DRAIN−SOURCE DIODE CHARACTERISTICS

Source to Drain Diode Forward Voltage| VSD| VGS = 0 V, IS = 2 A|  | 0.65| 1.2| V
---|---|---|---|---|---|---
VGS = 0 V, IS = 48 A|  | 0.83| 1.3
Reverse Recovery Time| trr| IF = 24 A, di/dt = 300 A/µs|  | 34|  | ns
Reverse Recovery Charge| Qrr|  | 73|  | nC
Reverse Recovery Time| trr| IF = 24 A, di/dt = 1000 A/µs|  | 28|  | ns
Reverse Recovery Charge| Qrr|  | 183|  | nC

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.

Pulse Test: pulse width  300 s, duty cycle  2%.
Switching characteristics are independent of operating junction temperatures.

TYPICAL CHARACTERISTICS

onsemi NVMFS3D6N10MCLT1G MOSFET Power Single N
-Channel-fig3 onsemi
NVMFS3D6N10MCLT1G MOSFET Power Single N-Channel-fig4

onsemi NVMFS3D6N10MCLT1G MOSFET Power Single N-Channel-
fig5

DEVICE ORDERING INFORMATION

Device Marking Package Shipping
NVMFS3D6N10MCLT1G 3D6L10 DFN5 5×6, 1.27P

(Pb−Free)

| 1500 / Tape & Reel
NVMFWS3D6N10MCLT1G| 3D6W10| DFNW5, 5×6 (FULL−CUT SO8FL WF)

(Pb−Free, Wettable Flanks)

| 1500 / Tape & Reel

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.

MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

onsemi NVMFS3D6N10MCLT1G MOSFET Power Single N-Channel-
fig6

*For additional information on our Pb−Free strategy and solderingdetails, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

DOCUMENT NUMBER:| 98AON14036D| Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
---|---|---
DESCRIPTION:| DFN5 5×6, 1.27P (SO−8FL)| PAGE 1 OF 1

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others.

onsemi NVMFS3D6N10MCLT1G MOSFET Power Single N-Channel-
fig7

onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

  • LITERATURE FULFILLMENT:
    Email Requests to: orderlit@onsemi.com
    onsemi Website : www.onsemi.com

  • TECHNICAL SUPPORT
    North American Technical Support:
    Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 011 421 33 790 2910

  • Europe, Middle East and Africa Technical Support:
    Phone: 00421 33 790 2910
    For additional information, please contact your local Sales Representative

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