Littelfuse IXBOD1-06 Breakover Diode Gen Owner’s Manual

July 24, 2024
Littelfuse

Littelfuse IXBOD1-06 Breakover Diode Gen

FAQ

Frequently Asked Questions

  • Can I use the Breakover Diode Gen1 in all applications?
    • While the product is designed for a wide range of applications, users should independently evaluate its suitability for specific use cases.
  • What are the maximum ratings for the Breakover Diode Gen1?
    • The diode has a maximum breakover voltage of 1000 V, a maximum average forward current of 0.9 A, and a maximum pulsed source current of 2 A.
  • How do I identify different variants of the Breakover Diode Gen1?
    • The diode variants are labeled as IXBOD1-06, IXBOD1-07, IXBOD1-08, IXBOD1-09, and IXBOD1-10, each with specific characteristics and applications.

Product Information

Information

  • VBO = 600-1000 V
  • IAVM = 0.9 A
V BO [V] Standard Types
600 ±50 IXBOD1-06
700 ±50 IXBOD1-07
800 ±50 IXBOD1-08
900 ±50 IXBOD1-09
1000 ±50 IXBOD1-10

Backside: isolated

Features / Advantages

  • Fast turn on
  • Low temperature dependance
  • Low leakage current

Applications

  • High voltage circuit protection
  • Transient voltage protection
  • Trigger device
  • Power pulse generators
  • Lightning and arcing protection
  • Energy discharge circuits
  • Battery overvoltage protection
  • Solar array protection

Package

Package: FP-Case

  • Industry standard outline
  • RoHS compliant
  • Epoxy meets UL 94V-0
  • Soldering pins for PCB mounting
  • Base plate: Plastic overmolded tab
  • Reduced weight

Symbol Definitions

BOD1

BOD1 Ratings
Symbol Definitions Conditions
I D drain current                                             VD = 0.8
· VBO                                          TVJ = 125°C
V BO breakover voltage                                     VBO
(TVJ) = VBO, 25°C [1 + KT (TVJ – 25°C)]
I RMS RMS current                                             f =

50 Hz                                                 Tamb = 50°C

pins soldered to printed circuit (conductor 0.035x2mm)

| | | 1.4| A
I FAVM| maximum average forward current| | | 0.9| A
I SM **** maximum pulsed source current

I 2t **** I2t value for fusing

| tp = 0.1 ms; non repetitive                    Tamb = 50°C| | | 200| A
tp = 0.1 ms                                              Tamb = 50°C| | | 2| A2s
K T| temperature coefficient of VBO| | | 2 · 10–3| K-1
K P| coefficient for energy per pulse EP (material constant)| 700| K/Ws
R thJA| thermal resistance junction to ambient      natural convection| | | 60| K/W
| with air speed 2 m/s| 45| K/W
I BO| breakover current TVJ = 25°C| | | 15| mA
I H| holding current TVJ = 25°C| | | 30| mA
V H| holding voltage TVJ = 25°C| 4| | 8| V
(dv/dt) cr| critical rate of rise of voltage                     VD = 0.67 · (VBO +100 V)                          TVJ = 50°C| | | 1000| V/µs
(di/dt) cr| critical rate of rise of curent                       VD = VBO; IT = 80 A; f = 50 Hz              TVJ = 125°C| | | 200| A/µs
t q| turn-off time                                               VD = 0.67 · VBO; VR = 0 V; IT = 80 A       TVJ = 125°C

dv/dt(lin.) = 200 V/µs; di/dt = -10 A/µs

| | 150| | µs
V T| forward voltage drop                                 IT = 5 A TVJ = 125°C| | | 1.7| V
V T0

r T

| threshold voltage                                      for power-loss calculation only           T  = 125°C

slope resistance VJ

| | | 1.1

0.12

| V

W

Package FP-Case

Symbol| Definitions| Conditions| min.| typ.| max.|
---|---|---|---|---|---|---
T amb| ambient temperature (cooling medium)| | -40| | 125| °C
T stg| storage temperature| | -40| 125| °C
T VJM| maximum virtual junction temperature| | -40| 125| °C
Weight| | 0.9| | g

Product Marking

Ordering Part Name

Ordering| Part Name| Marking on Product| Delivering Mode| Base Qty| Ordering Code
---|---|---|---|---|---
Standard| IXBOD1-06| IXBOD1-06| Box| 100| 467936
Standard| IXBOD1-07| IXBOD1-07| Box| 100| 478873
Standard| IXBOD1-08| IXBOD1-08| Box| 100| 467928
Standard| IXBOD1-09| IXBOD1-09| Box| 100| 474940
Standard| IXBOD1-10| IXBOD1-10| Box| 100| 467839

Outlines

FP-case

Diode

  • Fig. 1 Energy per pulse for trapezoidal current waveforms (see waveform definition)
  • Fig. 2 Energy per pulse for exponentially decaying current pulse (see waveform definition)
  • Fig. 3 On-state voltage
  • Fig. 4 Transient thermal resistance

Disclaimer Notice

Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice Disclaimer Notice at www.littelfuse.com/disclaimer- electronics.

IXYS reserves the right to change limits, test conditions and dimensions.
Data according ot IEC 60747 and per semiconductor unless otherwise specified

© 2020 IXYS All rights reserved

References

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