SKYWORKS UG484 Circuit Configuration User Guide

SKYWORKS UG484 Circuit Configuration

• The Si828x-HB-EVB (Si828x Half-Bridge EVB) is a versatile plat- form for demonstrating the features of the Si828x with SiC/IGBT devices in a half-bridge circuit configuration. The board includes the Si8285 to drive the high-side switch and an Si8284 to drive the low-side switch.
• The Si8284 has an integrated dc-dc circuit that operates with an external MOSFET and a transformer to generate two pairs of isolated positive and negative voltages to power both the Si8285 and the Si8284.
• The Si828x-HB-EVB has a “non-overlap” circuit to take PWM signal input from a single-channel function generator to produce complimentary PWM signals with programable dead time control to drive the inputs of the Si8285 and Si8284 gate drivers. The input circuit can also be configured to operate with two channel function generators to drive the input of the Si8285 and Si8284 directly.
• There are terminals on the outputs of the half-bridge power circuit that can be arranged to support double pulse (switching loss), cross talk, and Si828x DESAT short circuit protection tests. Also, the board can be configured to operate with an external inductor (not included) in half-bridge buck or boost operation for dv/dt and dc-dc efficiency testing.
• The board has connections for current and voltage probes to support data collection during tests. Operating the board is simple with the assistance of the LED indicators (RDY, /FLT), current sensor (not included), voltage measurement (BNC, SMA) connec-tors, and the /FLT reset button.

KEY FEATURES

• Half-bridge demonstration board for SiC/ IGBT
• Operates up to 1 kV DC-Rail input
• Demonstrates half-bridge operations (double pulse, buck, boost)
• Demonstrates desaturation protection
• Demonstrates adjustable soft shutdown capability
• Onboard “non-overlap” circuit to convert single PWM signal into complementary signals with independent adjustable deadtime
• Demonstrates Si8284 integrated dc-dc to generate all necessary voltages to power both high- and low-side gate drivers
• Supports IGBT/SiC in TO-247 packages in standard 3-pin and 4-pin configurations with Kelvin Source connection
• Supports gate current booster option.

Schematics

Si828x-HB-EVB Connections for Testing

DANGER! This board may contain high voltages of up to 1000 V. Do not touch the board after the high-voltage section has been energized!

Input Power
The Si828x-HB-EVB is powered by applying VDDP = 5 V (± 10%) to pin 3 (+) and Pin 2 (–) of the J102 connector. The Si8281 with integrated dc-dc generates voltages to power both the Si8281 and Si8285 gate drivers. The RDY green LEDs (D104, D110) are lit when proper VDDA, VDDBs, and VSSBs (VSSB is a negative voltage polarity) are present. There aretest points to check the VDDB and VSSB voltage levels (reference to VMID). The VDDB and VSSB voltage levels can be adjusted by selecting the R319 and R317 values.
VDDB − VSSB = 1 . 05 × R319/ R317 + 1

The ratio between VDDB and VSSB voltages is determined by the T1 transformer turns ratio between the two secondary windings (see UMEC UTB02286S transformer data sheet for details).
VDDB = VDDB − VSSB × W7 − 8/ W7 − 8 + W6 − 7

Input Signals
The Si828x-HB-EVB has flexible PWM input signal connections to support all testing configurations.

Single PWM Input
J103 (SMA) provides connection for single PWM input to drive both Si8285 and Si8281. The onboard nonoverlapped circuit comprises of U8 and U9 generates complimentary PWM signals to drive Si8281 and Si8285. The potentiometers R45 and R46 provide dead time adjustment controls (both pots are set for 170 ns dead time at the factory). Below are connections for J47, J9 and J10 to support single PWM input operation (as shown in Figure 2.1 Si828x-HB-EVB Input Power and Input Signals on page 6).

• J103 (SMA): Input PWM signal
• J47: pin 1 to pin 2
• J9: pin 1 to pin 2
• J10: pin 1 to pin 2

Direct PWMs Connection to Si8285 and Si8281
SMA connectors J109 and J110 provide PWM input connections to the IN+ of the Si8285 (high-side gate driver) and Si8281 (low-side gate driver), respectively. Dual channel function generator with proper setting (dead time…) should be used to drive both gate drivers simultaneously. The J9 and J10 connections to support direct PWMs connections to J109 and J110 are listed below:

• J109 (SMA): Si8285 IN+
• J110 (SMA): Si8281 IN+
• J9: Pin 2 to Pin 3
• J10: Pin 2 to Pin 3

It is also possible to drive one gate driver directly from the function generator while keeping the second gate driver in the off state by placing a jumper on J9 or J10 to keep the IN+ at the logical low level. The J9 and J10 jumper connections to connect the IN+ signal to GND are listed below:

• J9: Pin 2 to Pin 1 (high-side SI8285 driver)
• J10: Pin 2 to Pin 1 (low-side Si8281 driver)

Scope Probe Connections and DESAT Configurations

Gate, VDS, and Low-Side Current Monitors
The Si828x-HB-EVB has the following connections to support voltage and current measurements

• J107 (SMA), top-side Si8285 gate (bottom mounted, requires isolated probe)
• J108 (SMA), low-side Si8281 gate (bottom mounted)
• J115, high-side VDS (bottom mounted BNC, requires isolated probe)
• J114, low-side VDS (bottom mounted BNC)
• J111, low-side Isense; recommending T&M Research (0.005V/A) SDN-005 BNC (not included)

DESAT Monitor/Disable
The two pin headers IS202 and IS308 are used to provide scope probe connections for DESAT monitors or for DESAT disable control

• IS202 top-side Si8285 DESAT: Pin 1: DESAT1, Pin 2: VMID1; DESAT1 is disabled when Pin 1 is shorted to Pin 2
• IS308 low-side Si8281 DESAT: Pin 1: DESAT2, Pin 2: VMID2; DESAT2 is disabled when Pin 1 is shorted to Pin 2

Test Configurations

The Si828x-HB-EVB has configurable connections to support most half-bridge performance tests for both top and bottom switching devices.

Double Pulse Test
The Si828x-HB-EVB can be configurated to evaluate the power switching devices in half bridge double pulse test at different current levels. By adjusting the switching on time and the time between the PWM pulses, the Device Under Test (DUT) can be controlled and measured over the full range of operating conditions. In this test, the PWM signal is injected directly to the IN+ of the first gate driver to operate its switching device while the IN+ of the second gate driver is shorted to GND to keep its switching device in the off state. The body diode of the off state switching device works in conjunction with the active switching device to provide realistic switching characteristics of the half bridge circuit.

Double Pulse Test on Low-Side Switching Device
Figure 4.1 Si828x-HB- EVB Connections for Double Pulse Test on page 9 provides connections for the double pulse test for the low-side switching device. Gate driver power:

• Connect 5 V to J102.

DC-Rail input:

• Connect DC-Rail voltage between J101–J106.
• Connect J113 to J101 to increase the DC-Rail bypass cap from 10 μF to 20 μF.

PWM input signal:

• Connect PWM input to J110 SMA connector.
• JP9: Jumper between Pin 2–3 to short Si8285 IN+ to GND.
• JP10: No jumper.

Inductor:
Connect inductor (air core preferred) with appropriate value from 25 μH to 75 μH between J101–J112 (keep the inductor at least two feet away from Si828x-HB- EVB and test instrumentation to avoid interferences).

Oscilloscope connections:
Figure 4.1 Si828x-HB- EVB Connections for Double Pulse Test on page 9 shows probe scope connections for this test. Also, see 3.1 Gate, VDS, and Low-Side Current Monitors for a list of scope probe connections for voltage and current measurements.

Double Pulse Test on High-Side Switching Device
Connections for double pulse test on high-side switching device are similar to the connections for testing the low-side switching device (as described in 4.1.1 Double Pulse Test on Low-Side Switching Device) except for the following connections:

PWM input signal:

• Connect PWM input to J109 SMA connector.
• JP9: No jumper.
• JP10: Jumper between Pins 2–3 to short Si8281 IN+ to GND.

Inductor:
Connect inductor (air core preferred) with appropriate value between J112–J106 (keep the inductor at least two feet away from Si828x-HB-EVB and test instrumentation to avoid interference).

Cross Talk Testing
Data for the crosstalk test can be collected during the double pulse test described in 4.1 Double Pulse Test. Cross talk data is the voltage spike on the gate of the off-state device (J107 or J108) during switching operations. This voltage spike provides information on how the gate driver copes with the dv/dt induced Miller current during switching operation.

DESAT Shorted Circuit Test
The Si828x-HB-EVB has connections to support DESAT shorted circuit test on either the low-side or high-side switching device. During test, a PWM signal is injected directly to the IN+ of the low-side or high-side switching device (the first device) while a short connection is placed across the D-S terminals of the second device. When a PWM signal turns on the first switching device, there is a large shoot-through current originated from the + terminal of the DC-Rail across the first switching device and the short on the second device toward the negative terminal of the DC-Rail. The DESAT circuit of the gate driver must work effectively to protect the first switching device from this short condition. DESAT detection response time is adjustable through the value of the R130 and R342 resistors while soft shutdown speed is adjustable through the value of the R211 and R346 resistors (manufactory default resistor value is 30 Ω). See “AN1288: Si828x External Enhancement Circuits” for more details.

DESAT Shorted Circuit Test on Low-Side Switching Device
DESAT Shorted Circuit Test provides connections for the double pulse test for the low-side switching device.

Gate driver power:
Connect 5 V to J102.

DC-Rail:

• Connect DC-Rail voltage between J101–J106.
• Screw bus wire between J101, J112 and J113 to increase the DC-Rail bypass cap from 10 μF to 20 μF and to place short on the high-side switching device.

PWM input signal:

• Connect PWM input to J110 SMA connector.
• JP9: place jumper between Pins 2–3 to short Si8285 IN+ to GND.
• JP10: no jumper.

Oscilloscope connections:
4.3 DESAT Shorted Circuit Test shows probe scope connections for this test. See 3.1 Gate, VDS, and Low-Side Current Monitors for a list of probe scope connections for voltage and current measurements.

DESAT Shorted Circuit Test on High Side Switching Device
Connections for DESAT test on high side switching device are similar to the connections for testing the low side switching device (as described in 4.3.1 DESAT Shorted Circuit Test on Low-Side Switching Device) except for the following connections:

DC-Rail:

• Connect DC-Rail voltage between J101–J106.
• Screw bus wire between J101, J113 to increase the DC-Rail bypass cap from 10 μF to 20 μF.
• Solder a wire across the D-S terminals of the low-side switching device as indicated by Item #9 of Figure 4.2 Si828x-HB- EVB Probe Connections DESAT Shorted Circuit Test on page 11.

PWM input signal:

• Connect PWM input to J109 SMA connector.
• JP9: No jumper.
• JP10: Jumper between Pins 2–3 to short Si8281 IN+ to GND.

Buck/Boost DCDC Testing
The Si828x-HB-EVB can be configured to operate with an external inductor in dc-dc buck or boost operation. The two bulk filter capacitors, C118 and C119, can operate as input or output caps depending on whether a buck or boost configuration is used. The rating of the external inductor must be properly selected to support the operating voltages, output loading, and switching frequency. When operating at high output power, a heat sink with proper insulation and clip must be installed to dissipate heat from the two switching devices. Air flow may be required on the heat sink for very-high-power operation.

Si828x-HB-EVB in Buck DC-DC Operation
Figure 4.3 Si828x-HB-EVB Buck/Boost DC-DC Operation on page 12 shows the connections for operating the Si828x-HB-EVB in buck mode. Gate driver power: Connect 5 V to J102.
Inductor: Connect inductor between J112–J113.
DC-Rail input DC1: connect DC-Rail voltage between J101-J106
DC output, DC2: buck mode dc output
PWM input signal: see 2.2.1 Single PWM Input and 2.2.2 Direct PWMs Connection to Si8285 and Si8281 for two methods of connecting PWM signal to the Si828x-HB-EVB. Asynchronous and synchronous buck operation are possible by using proper PWM signals combines with the jumper setting on JP9 and JP10 Oscilloscope connections: Figure 4.3 Si828x-HB-EVB Buck/Boost DC-DC Operation on page 12 shows scope probe connections for this test. Also, see 3.1 Gate, VDS, and Low-Side Current Monitors for a list of probe scope connections for voltage and current measurements.

Si828x-HB-EVB in Boost DC-DC Operation
The connections for the Si828x-HB-EVB to operate in boost mode operation is the same as connection for the buck mode operation (see 4.4.1 Si828x-HB-EVB in Buck DC-DC Operation). The only difference is the swapping of the dc input and dc output connection as shown below:
DC-Rail input DC2: connect DC-Rail voltage between J101–J106
DC output, DC1: boost mode dc output

Current Booster Option

The Si828x-HB-EVB has VH, VL, MCLP, VMID, VDDB, and VSSB test points that can be connected to an external current booster daughter card. The gate resistors can be removed to insert the current booster circuit between the gate driver and the SiC. This option increases the current drive capability of the gate driver to more than 15 A. This circuit is optional and available on request. See “AN1288: Si828x External Enhancement Circuits” for more information on the Si828x current booster circuit.

Bill of Materials

Reference| Description| Manufacturer| Manufacturer Part Number
---|---|---|---
C39, C41, C203, C207, C302, C304, C307, C310, C316, C319| Capacitor, 0.1 µF, 25 V, ±20%,

X7R, 0603

| Venkel| C0603X7R250-104M
C40, C42| Capacitor, 1 nF, 100 V, ±10%,

X7R, 0603

| Venkel| C0603X7R101-102K
C101, C103, C104, C105| Capacitor, 0.1 µF, 1000 V,

±10%, X7R, 1825

| AVX| 1825AC104KAT1A
C111, C113| Capacitor, 270 pF, 50 V, ±10%,

X7R, 0603

| Kemet| C0603C271K5RACTU
C112, C180| Capacitor, 10 µF, 50 V, ±20%,

X7R, 1210

| Venkel| C1210X7R500-106M
C118, C119, C121| Capacitor, 10 µF, 1000 V, ±5%, PolyFilm, PTH| Vishay| MKP1848S61010JY2B
C126| Capacitor, 22 µF, 25 V, ±10%,

X7R, 1210

| Venkel| C1210X7R250-226M
C201, C308, C315| Capacitor, 10 µF, 10 V, ±20%,

X7R, 1206

| Venkel| C1206X7R100-106M
C202, C211, C311, C314| Capacitor, 0.1 µF, 10 V, ±10%,

X7R, 0402

| Venkel| C0402X7R100-104K
C204, C208, C317, C320| Capacitor, 2.2 µF, 25 V, ±20%,

X7R, 0805

| Venkel| C0805X7R250-225M
C205, C318| Capacitor, 1 nF, 100 V, ±10%,

X7R, 0603

| Venkel| C0603X7R101-102K
C212, C321, C322| Capacitor, 10 pF, 50 V, ±0.5 pF,

C0G, 0603

| Venkel| C0603C0G500-100D
C301, C303, C306, C309, C312| Capacitor, 10 µF, 25 V, ±20%,

X7R, 1210

| Venkel| C1210X7R250-106M
C313| Capacitor, 470 pF, 200 V, ±20%,

X7R, 0805

| Venkel| C0805X7R201-471M
D101, D102, D107, D108| Diode, Switch, Ultra Fast, 800 V, 1.0 A, SMA| Diodes Inc.| US1K-13-F
D104, D110| LED, Green, 0805| Lite-On Inc.| LTST-C170GKT
D105, D111| LED, Red, 631 nM, 30 mA, 2 V,

54 mcd, 0805

| Lite-On Tech| LTST-C170KRKT
D114, D115| Diode, Fast, 100 V, 2 A, SOD123| Diodes Inc.| 1N4148W
D201, D311| Diode, Schottky, 100V, 1A, SOD123| On Semi| MBR1H100SF
D302, D306, D309, D310| Diode, Schottky, 80 V, 500 mA, SOD123| Diodes Inc.| MBR0580S1
D303, D305| Diode, Zener, 24 V, 1000 mW, SMA| Diodes Inc.| SMAZ24-13-F
Reference| Description| Manufacturer| Manufacturer Part Number
---|---|---|---
IS201, IS202, IS304, IS307, IS308| Header, 2×1, 0.1in pitch, Tin Plated| Samtec| TSW-102-07-T-S
JP9, JP10, JP47| Header, 3×1, 0.1in pitch, Tin Plated| Samtec| TSW-103-07-T-S
J101, J105, J106, J112, J113| CONN, Term Screw, 10-32, PTH| Keystone Electronics| 8174
J102| CONN, Term Block 3POS, 5.08 mm, RT PCB| Phoenix Contact| 1729131
J103, J109, J110| CONN, SMA 50 Ω, Straight, PTH| Johnson Components| 142-0701-201
J107, J108| CONN SMA Jack R/A 50 Ω SMD| Amphenol RF| 132136-12
J114, J115| CONN, BNC, Test Lead, 4in.

Leads , PTH

| Mueller Electric Co.| BU-5200-A-4-0
L101| Inductor, 1210| TDK| NLCV32T-100K-PF
PCB1| PCB, Bare Board, Si8281- HPWR-ENG REV 1.0| Skyworks| SI828XTE_SIC-HV PCB
Q1, Q2| SiC, 1200 V, 115 A, 16 mΩ, TO-247 3-pin| CREE| C3M0016120D
Q3, Q4| SiC, 1200 V, 115 A, 16 mΩ, TO-247 4-pin| CREE| C3M0016120K
Q5, Q6| Transistor, PNP, –60 V, 600 mA, SOT23| NXP Semiconductors| PMBT2907A
R45, R46| Trim pot, 2 kΩ, 1T, Top ADJ, SMD| Murata| PVG3A202C01R00
R47, R108, R114| Resistor, 10 kΩ, 1/16W, ±5%,

Thick Film, 0402

| Venkel| CR0402-16W-103J
R101, R111| Resistor, 100 Ω, 1/10W, ±1%,

Thick Film, 0805

| Venkel| CR0805-10W-1000F
R103, R105, R113| Resistor, 10 kΩ, 1/8 W, ±1%,

Thick Film, 0805

| Venkel| CR0805-8W-1002F
R106, R107, R119, R120| Resistor, 2.2 kΩ, 1/10 W, ±5%,

Thick Film, 0805

| Venkel| CR0805-10W-222J
R130, R342| Resistor, 2.2 kΩ, 1/10 W, ±1%,

Thick Film, 0603

| Yageo| RC0603FR-072K2L
R201, R311, R321| Resistor, 0.1 Ω, 1/2 W, ±1%,

Thick Film, 1210

| Venkel| LCR1210-R100F
R202| Resistor, 4.7 kΩ, 1/10 W, ±1%,

Thick Film, 0603

| Venkel| CR0603-10W-4701F
R203, R323| Resistor, 4.02 Ω, 1/4 W, ±1%,

Thick Film, 1206

| Venkel| CR1206-4W-4R02F
R204, R324| Resistor, 1.0 Ω, 1/4 W, ±1%,

Thick Film, 1206

| Venkel| CR1206-4W-1R00F
R205| Resistor, 0 Ω, 2 A, Thick Film, 0805| Venkel| CR0805-10W-000
Reference| Description| Manufacturer| Manufacturer Part Number
---|---|---|---
R207, R208, R327, R328| Resistor, 100 Ω, 1/10 W, ±1%,

Thick Film, 0603

| Venkel| CR0603-10W-1000F
R210, R345| Resistor, 100 Ω, 1/16 W, ±1%,

Thick Film, 0603

| Venkel| CR0603-16W-1000F
R211, R346| Resistor, 30 Ω, 1/8 W, ±1%,

Thick Film, 0805

| Yageo| RC0805FR-0730RL
R301, R306, R313, R330, R331, R332| Resistor, 1.0 kΩ, 1/4 W, ±5%,

Thick Film, 1206

| Venkel| CR1206-4W-1R0J
R317| Resistor, 8.66 kΩ, 1/16 W, ±1%,

Thick Film, 0603

| Venkel| CR0603-16W-8661F
R319| Resistor, 150 kΩ, 1/10 W, ±1%,

Thick Film, 0603

| Panasonic| ERJ-3EKF1503V
R320| Resistor, 200 kΩ, 1/10 W, ±1%,

Thick Film, 0805

| Venkel| CR0805-10W-2003F
R325| Resistor, 10.0 Ω, 2 W, ±1%,

Thick Film, 2512

| Venkel| CR2512-2W-10R0FT-W
R333, R334, R337, R338, R343, R344| Resistor, 0 Ω, 4 A, Thick Film, 1210| Venkel| CR1210-4W-000
R335, R336| Resistor, 10 kΩ, 1/16 W, ±1%,

Thick Film, 0603

| Venkel| CR0603-16W-1002F
R339| Resistor, 1 kΩ, 1/10 W, ±1%,

Thick Film, 0805

| Venkel| CR0805-10W-1001F
R406, R407, R408, R409, R410, R411, R412, R413| Resistor, 1 MΩ, 1/8 W, ±1%,

Thick Film, 1206

| Venkel| CR1206-8W-1004F
R424| Resistor, 249 kΩ, 1/4 W, ±0.1%,

ThinFilm, 1206

| Panasonic| ERA-8AEB2493V
S101| Switch, PB, NO, Momentary, 6 mm, PTH| Panasonic| EVQ-PAD04M
TP101, TP102, TP106, TP107, TP108, TP109, TP111, TP112, TP121, TP201, TP202, TP203, TP204, TP205, TP206, TP301, TP302, TP303, TP304, TP305, TP306, TP307, TP308, TP309, TP310, TP311, TP312, TP313, TP314| ****

Testpoint, White, PTH

| ****

Kobiconn

| ****

151-201-RC

TP104, TP105, TP113, TP116, TP117, TP118| Testpoint, Black, PTH| Kobiconn| 151-203-RC
TP114, TP115, TP119, TP120| Testpoint, Blue, PTH| Kobiconn| 151-205-RC
T1| Transformer, 1.5 µH, 10%, 3750VAC ISOL.| UMEC| UTB02286S
U4| Heatsink, TO-247, Aluminum| Ohmite| C40-058-VE
U8| IC, NAND, Quad, 2 Input, SO14| TI| SN74HC00DR
U9| IC, Inverter, Hex, SO14| TI| CD74AC04M
U201| IC, 4 Amp Isodriver, 12 V UV- LO, 5 kV, SOW16| Skyworks| Si8285CD-A-IS
Reference| Description| Manufacturer| Manufacturer Part Number
---|---|---|---
U301| IC, 4 A Isodriver with Isovolt, SO20 WB| Skyworks| Si8281CD-IS
J114, J115| CONN, BNC, Test Lead, 4 in.

Leads , PTH

| Mueller Electric Co.| BU-5200-A-4-0
Not Installed Components
J111| CONN, Jack BNC VERT 10 mΩ

current sense

| T&M Research| SDN-414-01
C102, C210| Capacitor, 10000 pF, 1000 V,

±10%, X7R, 1825

| AVX| 1825AC103KAT1A
C115| Capacitor, 0.1 µF, 25 V, ±10%,

X7R, 0603

| Venkel| C0603X7R250-104K
C116| Capacitor, 2200 pF, 50 V, ±10%,

X7R, 0402

| Venkel| C0402X7R500-222K
C122, C124| Capacitor, 22 nF, 25 V, ±5%,

C0G, 0805

| Venkel| C0805C0G250-223J
C123, C127| Capacitor, 4.7 µF, 16 V, ±10%,

X5R, 0805

| Venkel| C0805X5R160-475K
C125| Capacitor, 1 µF, 50 V, ±1%,

C0G, 0805

| Venkel| C0805C0G500-105F
C209| Capacitor, 10 pF, 50 V, ±0.5 pF,

C0G, 0603

| Venkel| C0603C0G500-100D
C216| Capacitor, 0.047 µF, 100V,

±10%, X7R, 0805

| Venkel| C0805X7R101-473K
D113| Diode, Schottky, 40 V, 1.0 A, SOD123| ST Semiconductor| STPS140Z
R115| Resistor, 22 kΩ, 1/8 W, ±1%,

Thick Film, 0805

| TE Connec.| CRGCQ0805F22K
R116| Resistor, 33 kΩ, 1/16 W, ±1%,

Thick Film, 0603

| Venkel| CR0603-16W-3302F
R118| Resistor, 1K, 1/8W, ±1%, Thick Film, 0805| Venkel| CR0805-8W-1001F
R124| Resistor, 3.16 kΩ, 1/8 W,

±0.1%, ThinFilm, 0805

| Panasonic| ERA-6AEB3161V
R125| Resistor, 249 kΩ, 1/10 W, ±1%,

Thick Film, 0603

| Panasonic| ERJ-3EKF2493V
R126| Resistor, 221 kΩ, ¼ W, ±1%,

Thick Film, 1206

| Yageo| RC1206FR-07221KL
R127| Resistor, 1 kΩ, 1/10 W, ±1%,

Thick Film, 0805

| Venkel| CR0805-10W-1001F
R128| Resistor, 499 Ω, 1/4W, ±1%,

ThinFilm, 0805

| Stackpole Elec.| RNCP0805FTD499R
R341| Resistor, 10 kΩ, 1/16 W, ±1%,

Thick Film, 0603

| Venkel| CR0603-16W-1002F
R403| Trim pot, 2 K, 1T, Top ADJ, SMD| Murata| PVG3A202C01R00
Reference| Description| Manufacturer| Manufacturer Part Number
---|---|---|---
R404| Resistor, 330K, 1/8W, ±1%, Thick Film, 0805| TE Connec.| CRGCQ0805F330K
R405| Resistor, 1M, 1/8W, ±1%, Thick Film, 1206| Venkel| CR1206-8W-1004F
TP111, TP122, TP123, TP124| Testpoint, White, PTH| Kobiconn| 151-201-RC
TP113| Testpoint, Black, PTH| Kobiconn| 151-203-RC
U106| Voltage Mode Controller, 8-Pin SOIC| TI| TPS40200
U107| LT4430, Opto-Coupler Driver, 3V-20V| Linear T/AD| LT4430ES6#TRMPBF
U108| Photocoupler, 4-Pin Ultra Small| CEL| PS2911-1
Reference| Description| Manufacturer| Manufacturer Part Number
---|---|---|---
C1, C3, C5| Capacitor, 10 µF, 50 V, ±20%,

X7R, 1210

| Venkel| C1210X7R500-106M
C2, C4, C6| Capacitor, 0.1 µF, 50 V, ±10%,

X7R, 0603

| Yageo| CC0603KPX7R9BB104
D1| Diode, Schottky, 30 V, 1 A, SOD123| Rohm| RB160MM-30TF
D2, D3| Diode, Fast, 100 V, 2 A, SOD123| Diodes Inc.| 1N4148W
Q1| Transistor, NPN, 60 V, 5 A, LO SAT, SOT89| Diodes Inc.| ZXTN2010Z
Q2| Transistor, PNP, –60 V, –4.3A, SOT89| Zetex| ZXTP2012Z
Q3, Q4| Transistor, PNP, –60 V, –4 A, SOT23| Diodes Inc.| ZXTP2027FTA
RB3, RB4| Resistor, 100 Ω, 1/10 W, ±1%,

Thick Film, 0805

| Venkel| CR0805-10W-1000F
RL,RH| Resistor, 3.0 Ω, 1 W, ±1%,

Thick Film, 2010

| Vishay| CRCW20103R00FKEFHP
RSS| Resistor, 4.02 Ω, 1/4 W, ±1%,

ThickFilm, 1206

| Venkel| CR1206-4W-4R02F
R1| Resistor, 10 Ω, 1/4 W, ±1%,

Thick Film, 1206

| Venkel| CR1206-4W-10R0F
R2| Resistor, 20 Ω, 1/4 W, ±1%,

Thick Film, 1206

| Venkel| CR1206-4W-20R0FT

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