KINGSTON KVR26S19S6-4 4GB 1Rx16 512M x 64-Bit PC4-2666 CL19 260-Pin SODIMM Owner’s Manual
- June 9, 2024
- Kingston
Table of Contents
Memory Module Specifi cations
KVR26S19S6/4
4GB 1Rx16 512M x 64-Bit PC4-2666
CL19 260-Pin SODIMM
Owner’s Manual
DESCRIPTION
This document describes ValueRAM’s KVR26S19S6/4 as a 512M x 64-bit (4GB) DDR4-2666 CL19 SDRAM (Synchronous DRAM), 1Rx16, memory module, based on four 512M x 16-bit FBGA components. The SPD is programmed to JEDEC standard latency DDR4-2666 timing of 19-19-19 at 1.2V. This 260-pin SODIMM uses gold contact fingers. The electrical and mechanical specifications are as follows:
FEATURES
- Power Supply: VDD = 1.2V Typical
- VDDQ = 1.2V Typical
- VPP = 2.5V Typical
- VDDSPD = 2.2V to 3.6V
- Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals
- Low-power auto self refresh (LPASR)
- Data bus inversion (DBI) for data bus
- On-die VREFDQ generation and calibration
- Single-rank
- On-board I2 serial presence-detect (SPD) EEPROM
- 8 internal banks; 2 groups of 4 banks each
- Fixed burst chop (BC) of 4 and burst length (BL) of 8 via the mode register set (MRS)
- Selectable BC4 or BL8 on-the-fly (OTF)
- Fly-by topology
- Terminated control command and address bus
- PCB: Height 1.18” (30.00mm)
- RoHS Compliant and Halogen-Free
SPECIFICATIONS
CL(IDD) | 19 cycles |
---|---|
Row Cycle Time (tRCmin) | 45.75ns(min.) |
Refresh to Active/Refresh
Command Time (tRFCmin)| 350ns(min.)
Row Active Time (tRASmin)| 32ns(min.)
Maximum Operating Power| TBD W*
UL Rating| 94 V – 0
Operating Temperature| 0º C to +85º C
Storage Temperature| -55º C to +100º C
MODULE DIMENSIONS
All measurements are in millimeters.
(Tolerances on all dimensions are ±0.12 unless otherwise specified)
The product images shown are for illustration purposes only and may not be an
exact representation of the product.
Kingston reserves the right to change any information at anytime without
notice.
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Document No. VALUERAM1604A
References
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