onsemi NTMFS5H400NL MOSFET Power Single N-Channel Instructions

**onsemi NTMFS5H400NL MOSFET Power Single N-Channel Instructions

**

Features

• Small Footprint (5×6 mm) for Compact Design
• Low RDS(on) to Minimize Conduction Losses
• Low QG and Capacitance to Minimize Driver Losses
• These Devices are Pb−Free and are RoHS Compliant

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Parameter

| Symbol| Value|

Unit

---|---|---|---
Drain−to−Source Voltage| VDSS| 40| V
Gate−to−Source Voltage| VGS| ±20| V
Continuous Drain Current RθJC (Notes 1, 3)| **** Steady State| TC = 25°C| ID| 330| A
TC = 100°C| 210
Power Dissipation RθJC (Note 1)| TC = 25°C| PD| 160| W
TC = 100°C| 66
Continuous Drain Current RθJA (Notes 1, 2, 3)| **** Steady State| TA = 25°C| ID| 46| A
TA = 100°C| 29
Power Dissipation RθJA (Notes 1 & 2)| TA = 25°C| PD| 3.3| W
TA = 100°C| 1.3
Pulsed Drain Current| TA = 25°C, tp = 10 µs| IDM| 900| A
Operating Junction and Storage Temperature| TJ, Tstg| − 55 to+ 150| °C
Source Current (Body Diode)| IS| 180| A
Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 49 A)| EAS| 360| mJ
Lead Temperature for Soldering Purposes (1/8² from case for 10 s)| TL| 260| °C

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter

| Symbol| Value|

Unit

---|---|---|---
Junction−to−Case − Steady State| RθJC| 0.76| °C/W
Junction−to−Ambient − Steady State (Note 2)| RθJA| 38

1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle.

V (BR)DSS

| R DS(ON) MAX|

I D MAX

---|---|---
40 V| 0.80 mΩ @ 10 V| 330 A
1.1 mΩ @ 4.5 V

N−CHANNEL MOSFET

DFN5 (SO−8FL) CASE 506EZ

MARKING DIAGRAM

5H400L = Specific Device Code
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability

ORDERING INFORMATION
See detailed ordering, marking and shipping information on page 5 of this data sheet.

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)

Parameter| Symbol| Test Condition| Min| Typ| Max| Unit
---|---|---|---|---|---|---

OFF CHARACTERISTICS

ON CHARACTERISTICS (Note 4)

mΩ
VGS = 4.5 V| ID = 50 A| | 0.85| 1.1
Forward Transconductance| gFS| VDS =15 V, ID = 50 A| | 350| | S

CHARGES, CAPACITANCES & GATE RESISTANCE

**** nC
Total Gate Charge| QG(TOT)| VGS = 10 V, VDS = 20 V; ID = 50 A| | 120|
Threshold Gate Charge| QG(TH)| VGS = 4.5 V, VDS = 20 V; ID = 50 A| | 11|
Gate−to−Source Charge| QGS| | 20|
Gate−to−Drain Charge| QGD| | 13|
Plateau Voltage| VGP| | 2.7| | V

SWITCHING CHARACTERISTICS (Note 5)

Turn−On Delay Time| td(ON)| VGS = 4.5 V, VDS = 20 V, ID = 50 A, RG = 2.5 Ω| | 20| | ns
---|---|---|---|---|---|---
Rise Time| tr| | 140|
Turn−Off Delay Time| td(OFF)| | 51|
Fall Time| tf| | 17|

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage| VSD| VGS = 0 V, IS = 50 A| TJ = 25°C| | 0.76| 1.2| V
---|---|---|---|---|---|---|---
TJ = 125°C| | 0.6|
Reverse Recovery Time| tRR| VGS = 0 V, dIS/dt = 100 A/µs, IS = 50 A| | 66| | **** ns
Charge Time| ta| | 35|
Discharge Time| tb| | 31|
Reverse Recovery Charge| QRR| | 100| | nC

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions

Pulse Test: pulse width 300 s, duty cycle 2%. Switching characteristics are independent of operating junction temperatures.

TYPICAL CHARACTERISTICS

Figure 1. On−Region Characteristics

Figure 2. Transfer Characteristics

**Figure 3. On−Resistance vs. Gate−to−Source Voltage

**

Figure 4. On−Resistance vs. Drain Current and Gate Voltage

Figure 5. On−Resistance Variation with Temperature

Figure 6. Drain−to−Source Leakage Current vs. Voltage

Figure 7. Capacitance Variation

Figure 8. Gate−to−Source vs. Total Charge

Figure 9. Resistive Switching Time Variation vs. Gate Resistance

Figure 10. Diode Forward Voltage vs. Current

**Figure 11. Safe Operating Area

**

Figure 12. IPEAK vs. Time in Avalanche

Figure 13. Thermal Characteristics

DEVICE ORDERING INFORMATION

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.

onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

LITERATURE FULFILLMENT:
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TECHNICAL SUPPORT
North American Technical Support:
Voice Mail: 1 800−282−9855 Toll Free USA/Canada
Phone: 011 421 33 790 2910

Europe, Middle East and Africa Technical Support:
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For additional information, please contact your local Sales Representative

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