onsemi NTMFS5H400NL MOSFET Power Single N-Channel Instructions
- June 9, 2024
- onsemi
Table of Contents
**onsemi NTMFS5H400NL MOSFET Power Single N-Channel Instructions
**
Features
- Small Footprint (5×6 mm) for Compact Design
- Low RDS(on) to Minimize Conduction Losses
- Low QG and Capacitance to Minimize Driver Losses
- These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
| Symbol| Value|
Unit
---|---|---|---
Drain−to−Source Voltage| VDSS| 40| V
Gate−to−Source Voltage| VGS| ±20| V
Continuous Drain Current RθJC (Notes 1, 3)| **** Steady State| TC = 25°C|
ID| 330| A
TC = 100°C| 210
Power Dissipation RθJC (Note 1)| TC = 25°C| PD| 160| W
TC = 100°C| 66
Continuous Drain Current RθJA (Notes 1, 2, 3)| **** Steady State| TA =
25°C| ID| 46| A
TA = 100°C| 29
Power Dissipation RθJA (Notes 1 & 2)| TA = 25°C| PD| 3.3| W
TA = 100°C| 1.3
Pulsed Drain Current| TA = 25°C, tp = 10 µs| IDM| 900| A
Operating Junction and Storage Temperature| TJ, Tstg| − 55 to+ 150| °C
Source Current (Body Diode)| IS| 180| A
Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 49 A)| EAS| 360| mJ
Lead Temperature for Soldering Purposes (1/8² from case for 10 s)| TL| 260| °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
| Symbol| Value|
Unit
---|---|---|---
Junction−to−Case − Steady State| RθJC| 0.76| °C/W
Junction−to−Ambient − Steady State (Note 2)| RθJA| 38
- The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted.
- Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
- Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle.
V (BR)DSS
| R DS(ON) MAX|
I D MAX
---|---|---
40 V| 0.80 mΩ @ 10 V| 330 A
1.1 mΩ @ 4.5 V
N−CHANNEL MOSFET
DFN5 (SO−8FL) CASE 506EZ
MARKING DIAGRAM
5H400L = Specific Device Code
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
ORDERING INFORMATION
See detailed ordering, marking and shipping information on page 5 of this
data sheet.
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter| Symbol| Test Condition| Min| Typ|
Max| Unit
---|---|---|---|---|---|---
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage | V(BR)DSS | VGS = 0 V, ID = 250 µA | 40 | V | ||
---|---|---|---|---|---|---|
Drain−to−Source Breakdown Voltage Temperature Coefficient | V(BR)DSS/ TJ | |||||
11.9 | mV/°C | |||||
Zero Gate Voltage Drain Current | IDSS | VGS = 0 V, VDS = 40 V | TJ = 25 °C | |||
10 | **** µA | |||||
TJ = 125°C | 250 | |||||
Gate−to−Source Leakage Current | IGSS | VDS = 0 V, VGS = 20 V | 100 | nA |
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage | VGS(TH) | VGS = VDS, ID = 250 µA | 1.2 | 2.0 | V | |
---|---|---|---|---|---|---|
Threshold Temperature Coefficient | VGS(TH)/TJ | −4.8 | mV/°C | |||
Drain−to−Source On Resistance | RDS(on) | VGS = 10 V | ID = 50 A | 0.60 | 0.80 |
mΩ
VGS = 4.5 V| ID = 50 A| | 0.85| 1.1
Forward Transconductance| gFS| VDS =15 V, ID = 50 A| | 350| | S
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance | CISS | VGS = 0 V, f = 1 MHz, VDS = 20 V | 7700 | **** pF | ||
---|---|---|---|---|---|---|
Output Capacitance | COSS | 1800 | ||||
Reverse Transfer Capacitance | CRSS | 87 | ||||
Output Charge | QOSS | VGS = 0 V, VDD = 20 V | 80 | nC | ||
Total Gate Charge | QG(TOT) | VGS = 4.5 V, VDS = 20 V; ID = 50 A | 54 |
**** nC
Total Gate Charge| QG(TOT)| VGS = 10 V, VDS = 20 V; ID = 50 A| | 120|
Threshold Gate Charge| QG(TH)| VGS = 4.5 V, VDS = 20 V; ID = 50 A| | 11|
Gate−to−Source Charge| QGS| | 20|
Gate−to−Drain Charge| QGD| | 13|
Plateau Voltage| VGP| | 2.7| | V
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time| td(ON)| VGS = 4.5 V, VDS = 20 V, ID = 50 A, RG = 2.5 Ω| |
20| | ns
---|---|---|---|---|---|---
Rise Time| tr| | 140|
Turn−Off Delay Time| td(OFF)| | 51|
Fall Time| tf| | 17|
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage| VSD| VGS = 0 V, IS = 50 A| TJ = 25°C| | 0.76| 1.2|
V
---|---|---|---|---|---|---|---
TJ = 125°C| | 0.6|
Reverse Recovery Time| tRR| VGS = 0 V, dIS/dt = 100 A/µs, IS = 50 A| |
66| | **** ns
Charge Time| ta| | 35|
Discharge Time| tb| | 31|
Reverse Recovery Charge| QRR| | 100| | nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions
Pulse Test: pulse width 300 s, duty cycle 2%. Switching characteristics are independent of operating junction temperatures.
TYPICAL CHARACTERISTICS
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
**Figure 3. On−Resistance vs. Gate−to−Source Voltage
**
Figure 4. On−Resistance vs. Drain Current and Gate Voltage
Figure 5. On−Resistance Variation with Temperature
Figure 6. Drain−to−Source Leakage Current vs. Voltage
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source vs. Total Charge
Figure 9. Resistive Switching Time Variation vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
**Figure 11. Safe Operating Area
**
Figure 12. IPEAK vs. Time in Avalanche
Figure 13. Thermal Characteristics
DEVICE ORDERING INFORMATION
Device | Marking | Package | Shipping † |
---|---|---|---|
NTMFS5H400NLT1G | 5H400L | DFN5(Pb−Free) | 1500 / Tape & Reel |
NTMFS5H400NLT3G | 5H400L | DFN5(Pb−Free) | 5000 / Tape & Reel |
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
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PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Email Requests to: orderlit@onsemi.com
onsemi Website: www.onsemi.com
TECHNICAL SUPPORT
North American Technical Support:
Voice Mail: 1 800−282−9855 Toll Free USA/Canada
Phone: 011 421 33 790 2910
Europe, Middle East and Africa Technical Support:
Phone: 00421 33 790 2910
For additional information, please contact your local Sales Representative
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