onseml NTMTS1D2N08H Mosfet Power Single N Channel Owner’s Manual
- August 16, 2024
- onseml
Table of Contents
ensemble NTMTS1D2N08H Mosfet Power Single N Channel
Product Specifications
- Product Name : MOSFET – Power, Single N-Channel
- Model Number: NTMTS1D2N08H
- Drain-to-Source Voltage (VDSS ): 80 V
- Continuous Drain Current (ID): 335 A
- Power Dissipation (PD): 1.1 mW
Product Usage Instructions
Features
The MOSFET features high drain-to-source voltage, continuous drain current,
and power dissipation capabilities.
Operating Conditions
- Operating Junction and Storage Temperature Range: Refer to the provided data sheet for specific values.
- Source Current (Body Diode): 335 A
- Single Pulse Drain-to-Source Avalanche Energy: 1734 mJ
- Lead Temperature for Soldering Purposes: Refer to the provided data sheet for specific values.
Thermal Resistance and Maximum Ratings
- Junction-to-Case Thermal Resistance: Refer to the data sheet for specific values based on application environment.
- Junction-to-Ambient Thermal Resistance: Refer to the data sheet for specific values based on application environment.
Features
- Small Footprint (8×8 mm) for Compact Design
- Low RDS(on) to Minimize Conduction Losses
- Low QG and Capacitance to Minimize Driver Losses
- These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain−to−Source Voltage | VDSS | 80 | V |
| Gate−to−Source Voltage | VGS | ±20 | V |
| Continuous Drain Current RSJC (Notes 1, 3) | **** |
Steady State
| TC = 25°C| ID| 335| A
TC = 100°C| 237
Power Dissipation RSJC (Note 1)| TC = 25°C| PD| 300| W
TC = 100°C| 150
Continuous Drain Current RSJA (Notes 1, 2, 3)| ****
Steady State
| TA = 25°C| ID| 41| A
TA = 100°C| 29
Power Dissipation RSJA (Notes 1, 2)| TA = 25°C| PD| 5| W
TA = 100°C| 2.5
Pulsed Drain Current| TA = 25°C, tp = 10 s| IDM| 900| A
Operating Junction and Storage Temperature Range| TJ, Tstg| − 55 to
+150
| °C
Source Current (Body Diode)| IS| 335| A
Single Pulse Drain−to−Source Avalanche Energy (L = 3 mH, IL(pk) = 34 A)| EAS|
1734| mJ
Lead Temperature for Soldering Purposes (1/8² from case for 10 s)| TL| 260| °C
THERMAL RESISTANCE MAXIMUM RATINGS
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Junction−to−Case − Steady State | RSJC | 0.5 | °C/W |
| Junction−to−Ambient − Steady State (Note 2) | RSJA | 30 |
- The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted.
- Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
- Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle.
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the package
dimensions section on page 5 of this data sheet.
NTMTS1D2N08H
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter| Symbol| Test Condition| Min| Typ|
Max| Unit
---|---|---|---|---|---|---
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage| V(BR)DSS| VGS = 0 V, ID = 250 A| 80| | |
V
---|---|---|---|---|---|---
Drain−to−Source Breakdown Voltage Temperature Coefficient| V(BR)DSS/ TJ| | |
57| | mV/°C
Zero Gate Voltage Drain Current| IDSS| VGS = 0 V, VDS = 80 V| TJ = 25 °C| |
| 10| ****
A
TJ = 125°C| | | 250
Gate−to−Source Leakage Current| IGSS| VDS = 0 V, VGS = 20 V| | | 100| nA
ON CHARACTERISTICS (Note 4)
| Gate Threshold Voltage | VGS(TH) | VGS = VDS, ID = 590 A | 2.0 | 2.9 | 4.0 | V |
|---|---|---|---|---|---|---|
| Threshold Temperature Coefficient | VGS(TH)/TJ | −7.6 | mV/°C | |||
| Drain−to−Source On Resistance | RDS(on) | VGS = 10 V | ID = 90 A | 0.93 | 1.1 |
mQ
VGS = 6 V| ID = 59 A| | 1.28| 1.6
Forward Transconductance| gFS| VDS =15 V, ID = 90 A| | 400| | S
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance| CISS| ****
VGS = 0 V, f = 500 kHz, VDS = 40 V
| | 10100| | ****
pF
---|---|---|---|---|---|---
Output Capacitance| COSS| | 1455|
Reverse Transfer Capacitance| CRSS| | 43|
Total Gate Charge| QG(TOT)| ****
VGS = 10 V, VDS = 64 V; ID = 90 A
| | 147| | ****
nC
Threshold Gate Charge| QG(TH)| | 27|
Gate−to−Source Charge| QGS| | 41|
Gate−to−Drain Charge| QGD| | 32|
Plateau Voltage| VGP| | 4| | V
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time| td(ON)|
VGS = 10 V, VDS = 64 V, ID = 90 A, RG = 2.5 Q
| | 29| |
ns
---|---|---|---|---|---|---
Rise Time| tr| | 14|
Turn−Off Delay Time| td(OFF)| | 66|
Fall Time| tf| | 19|
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage| VSD| VGS = 0 V, IS = 90 A| TJ = 25°C| | 0.8| 1.2|
V
---|---|---|---|---|---|---|---
TJ = 125°C| | 0.6|
Reverse Recovery Time| tRR| VGS = 0 V, dIS/dt = 100 A/ s, IS = 90 A| | 84| |
ns
Reverse Recovery Charge| QRR| | 189| | nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
- Pulse Test: pulse width ≤ 300 us, duty cycle ≤ 2%.
- Switching characteristics are independent of operating junction temperatures.
TYPICAL CHARACTERISTICS
DEVICE ORDERING INFORMATION
| Device | Marking | Package | Shipping † |
|---|---|---|---|
| NTMTS1D2N08H | NTMTS1D2N08H | DFNW8 |
(Pb−Free)
| 3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
TDFNW8 8.3×8.4, 2.0P, SINGLE COOL
RECOMMENDED LAND PATTERN
- FOR ADDITIONAL INFORMATION ON OUR PB-FREE
- STRATEGY AND SOLDERING DETAILS, PLEASE DOWNLOAD
- THE ON SEMICONDUCTOR SOLDERING AND MOUNTING
- TECHNIOLIES RECEPENCE MANLIAI COI DERRMINI
GENERIC MARKING DIAGRAM
- XXXX = Specific Device Code
- A = Assembly Location
- WL = Wafer Lot Code
- Y = Year Code
- WW = Work Week Code
This information is generic. Please refer to the device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ °”, may or may not be present. Some products may not follow the Generic Marking.
NOTES
- DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 2009.
- CONTROLLING DIMENSION: MILLIMETERS
- COPLANARITY APPLIES TO THE EXPOSED PADS AS WELL AS THE TERMINALS.
- DIMENSIONS D1 AND E1 DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS.
- SEATING PLANE IS DEFINED BY THE TERMINALS. LANE TO THE LOWEST POSTA ON THE FRE PACKAGE BODY.
DOCUMENT NUMBER:| 98AON80534G| Electronic versions are uncontrolled
except when accessed directly from the Document Repository. Printed versions
are uncontrolled except when stamped “CONTROLLED COPY” in red.
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DESCRIPTION:| TDFNW8 8.3×8.4, 2.0P, SINGLE COOL| PAGE 1 OF 1
ON Semiconductor and ON are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others.
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Semiconductor Components Industries, LLC, 2018
Frequently Asked Questions
- 1. What is the maximum Drain-to-Source Voltage of the MOSFET?
- The maximum Drain-to-Source Voltage is 80 V.
- 2. What is the Continuous Drain Current rating of the MOSFET?
- The MOSFET has a Continuous Drain Current rating of 335 A.
- 3. How should I determine the appropriate thermal resistance values for my application?
- The thermal resistance values are impacted by the application environment. Refer to the provided data sheet for conditions and values specific to your application.
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