RENESAS ISL8225MEVAL3Z Evaluation Board User Manual

ISL8225MEVAL3Z Evaluation Board
User Manual

Industrial Analog and Power

All information contained in these materials, including products and product specifications, represents information on the product at the time of publication and is subject to change by  Renesas Electronics Corp. without notice. Please review the latest information published by Renesas Electronics Corp. through various means, including the Renesas Electronics Corp. website (http://www.renesas.com).

The ISL8225M is a complete, dual step-down switching mode DC/DC module. The dual outputs can easily be paralleled for single-output, high-current use. It is easy to apply this high-power, current-sharing DC/DC power module to power- hungry datacom, telecom, and FPGA applications. All that is needed in order to have a complete, 30A design ready for use are the ISL8225M, a few passive components, and VOUT setting resistors.
The ease of use virtually eliminates design and manufacturing risks while dramatically improving time to market. The simplicity of the ISL8225M is its off-the-shelf, unassisted implementation. The module structure allows for higher power density and better efficiency than competing solutions. The current sharing in multiphase operation greatly reduces ripple currents, BOM costs, and complexity.
The ISL8225MEVAL3Z evaluation board enables a single output by paralleling two phases to deliver 30A continuous load current. The ISL8225M supports input voltages from 4.5V to 20V and output voltages from 0.6V to 7.5V. With the single resistor modification, the output voltage can be easily adjusted to different voltages.

Key Features

• Up to 100W output
• Single 30A output
• 4.5V to 20V input range
• 0.6V to 7.5V output range
• 1.5% output voltage accuracy
• Up to 95% conversion efficiency
• Lower output ripple and input ripple due to 180° phase shift

Specifications

This board is configured and optimized for the following operating conditions:

•  VIN = 4.5V to 20V, VO = 1.2V
• IO = 30A
• FSW = 500kHz
• 180° phase shift between phases

Ordering Information

Related Literature
For a full list of related documents, visit our website:

•  ISL8225M device page

Related Resources

• Evaluation Board Video

Functional Description

1.1 Recommended Equipment

• 0V to 20V power supply with at least 10A source current capability
• Electronic load capable of sinking current up to 30A
• Digital Multimeters (DMMs)
• 100MHz quad-trace oscilloscope

1.2 High Output Voltage Operation
The evaluation board is designed for output voltage below 5.5V. For output voltage higher than 6V, capacitors with a 10V rating must be used for C10 to C14. See the “ISL8225M Design Guide Matrix” table in the ISL8225M datasheet for selections of output capacitors, input capacitors, and switching frequency. The maximum load capability is 20A for 6.5V output and 14A for 7.5V output.

1.3 Quick Start
The inputs are J1 (VIN) and J2 (GND). The outputs are J3 (VOUT) and J4 (GND). See Figure 1 on page 3 for connections.

1. Connect a power supply capable of sourcing at least 10A to the ISL8225MEVAL3Z’s input (VIN J1 and GND J2), with a voltage between 4.5V to 20V. Connect an electronic load or the device to be powered to the board’s output (VOUT J3 and GND J4). All connections, especially the low voltage, high current VOUT lines, should be able to carry the desired load current and should be made as short as possible.
2. Turn on the power supply. Measure the output voltage, VOUT, which should be at 1.2V if the board is working properly.
3. The ISL8225MEVAL3Z is manufactured with a default VOUT value of 1.2V. If different output voltages are needed, board resistors can be exchanged to provide the required VOUT. See the table printed on the backside of the evaluation board or Table 1 for RVSET resistor values, which can be used to produce different output voltages.

For 12V VIN, and VOUT more than 1.5V, the switching frequency needs to be adjusted, as shown in Table 1; no frequency adjustments are necessary for VOUT below 1.5V. For 5V VIN, the frequency does not need to be adjusted and the module default frequency can be used at any allowed VOUT. If the output voltage is set to more than 1.8V, the output current needs to be derated to allow for safe operation at elevated ambient temperatures. See the derating curves in the ISL8225M datasheet.
For VIN < 5.5V, tie VIN directly to VCC for best efficiency. Also, Renesas recommends that the EN/FF voltage is over 1.5V to achieve better stability.

Table 1. Resistance Setting for Different Output Voltages and Operating Frequency (R = 1k)

PCB Layout Guidelines

The evaluation board size is 3 inches x 3 inches. It is a 4-layer board, containing 2-ounce copper on the top and bottom layers and 1-ounce copper on all internal layers. The board can be used as a 30A reference design. See “Layout” on page 8. The board is made up of FR4 material and all components, including the solder attachment, are Pb-free.

2.1 Thermal Considerations and Current Derating
For high current applications, the board layout is very critical to make the module operate safely and deliver maximum allowable power. To carry large currents, the board layout needs to be carefully designed to maximize thermal performance. To achieve this, select enough trace width, copper weight, and the proper connectors. The ISL8225MEVAL3Z is designed for running 30A at 1.2V at room temperature without additional cooling systems needed. However, if the output voltage is increased or the board is operated at elevated temperatures, then the available current is derated. See the derated current curves in the ISL8225M datasheet to determine the output current available.
For layout of designs using the ISL8225M, the thermal performance can be improved by adhering to the following design tips:

• Use the top and bottom layers to carry the large current. VOUT1, VOUT2, Phase 1, Phase 2, PGND, VIN1, and VIN2 should have large, solid planes. Place enough thermal vias to connect the power planes in different layers under and around the module.
• The Phase 1 and Phase 2 pads are switching nodes that generate switching noise. Keep these pads under the module. For noise-sensitive applications, Renesas recommends keeping the phase pads only on the top and inner layers of the PCB; do not place the phase pads exposed to the outside on the bottom layer of the PCB. To improve the thermal performance, the phase pads can be extended in the inner layer, as shown in Phase 1 and Phase 2 pads on Layer 3 (see Figure 6) for this 30A evaluation board. Make sure that Layer 2 and Layer 4 have the GND layers cover the extended areas of phase pads at Layer 3 to avoid noise coupling.
• To avoid noise coupling, Renesas recommends adding 470pF capacitors on all the COMP pins of each module for multiple module operations.
• If the ambient temperature is high or the board space is limited, airflow is needed to dissipate more heat from the modules. A heat sink can also be applied to the top side of the module to further improve the thermal performance (heat sink recommendation: Aavid Thermalloy, part number 375424B00034G, www.aavid.com).

2.2 ISL8225MEVAL3Z Board Schematic

2.3Bill of Materials

**Part Number| ****Ref Des| ****Qty.| ****Value| ****Tol.| ****Voltage| ****Power| Package Type| ****Jedec Type| ****Manufacturer| ****Description**
---|---|---|---|---|---|---|---|---|---|---
108-0740-001| J1-J4| 4| | | | | CONN| BAN-JACK| Johnson Components| Standard type banana jack
10TPB330M| C15| 1| 330µF| 20%| 10V| | SMD| CAP_7343_149| SANYO- POSCAP| Standard solid electrolytic chip tantalum SMD capacitor
5002| TP1-TP10| 10| | | | | THOLE| MTP500X| Keystone| Miniature white test point 0.100 pad 0.040 Thole
EEE1EA471P| C1| 1| 470µF| 20%| 25V| | SMD| CAPAE_393X402| Panasonic| Aluminum electrolytic S series type V capacitor (RoHS compliant)
GRM32ER71E226KE15L| C2-C5| 4| 22µF| 10%| 25V| | 1210| CAP_1210| Murata| Ceramic chip capacitor
H1045-00102-50V10-T| C7| 1| 1000pF| 10%| 50V| | 603| CAP_0603| Generic| Multilayer capacitor
H1045-00471-50V10| C8, C16| 2| 470pF| 10%| 50V| | 603| CAP_0603| Generic| Multilayer capacitor
H1045-00475-6R3V10-T| C6| 1| 4.7µF| 10%| 6.3V| | 603| CAP_0603| Generic| Multilayer capacitor
H1045-OPEN| C9| 1| OPEN| 5%| OPEN| | 603| CAP_0603| Generic| Multilayer capacitor
H1046-00476-6R3V20-T| C10| 1| 47µF| 20%| 6.3V| | 805| CAP_0805| Generic| Multilayer capacitor
H1065-00107-6R3V20-T| C12-C14| 3| 100µF| 20%| 6.3V| | 1206| CAP_1206| Generic| Multilayer capacitor
H1065-OPEN| C11| 1| OPEN| 5%| OPEN| | 1206| CAP_1206| Generic| Multilayer capacitor
H2505-DNP-DNP-1| RFSET| 1| DNP| 1%| | DNP| 603| RES_0603| Generic| Metal film chip resistor (do not populate)
H2511-02051-1/10W1-T| R2| 1| 2.05kΩ| 1%| | 1/10W| 603| RES_0603| Generic| Thick filmchip resistor
H2511-01001-1/16W1| R3, RVSET| 2| 1kΩ| 1%| | 1/16W| 603| RES_0603| Generic| Thick filmchip resistor
H2511-03301-1/16W5| R4| 1| 3.3kΩ| 5%| | 1/16W| 603| RES_0603| Generic| Thick filmchip resistor
H2511-06041-1/16W1| R1| 1| 6.04kΩ| 1%| | 1/10W| 603| RES_0603| Generic| Thick filmchip resistor
ISL8225MIRZ| M1| 1| | | | | QFN| QFN26_670X670_ISL8225M| Renesas| Dual 15A DC/DC power module

Note: Resistance accuracy of feedback resistor divider R1/R2 can affect the output accuracy. Please use high accuracy resistance (0.5% or 0.1%) to meet the output accuracy requirement.

2.4 Layout

Figure 3. Top Components

Figure 4. Top Layer

Figure 5. Layer 2

Figure 6. Layer 3

Figure 7. Bottom Layer

Figure 8. Bottom Components

ISL8225MEVAL3Z Efficiency Curves

Test conditions at +25°C and no airflow.

Revision History

Rev.| Date|

Description

---|---|---
2.00| Jun.10.19| Applied new formatting throughout the document. Replaced QR code with a link to the video on page 1. Added Revision History section.

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(Rev.4.0-1 November 2017)
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ISL8225MEVAL3Z

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