BROADCOM ACFJ-3262 Nexperia GAN 039-650NBB Half Bridge Evaluation Board User Manual
- June 4, 2024
- BROADCOM
Table of Contents
Nexperia GAN 039-650NBB Half-Bridge Evaluation Board
User Manual
ACFJ-3262 Nexperia GAN 039-650NBB Half-Bridge Evaluation Board
Broadcom, the pulse logo, Connecting everything, Avago Technologies, Avago,
and the A logo are among the trademarks of Broadcom and/or its affiliates in
the United States, certain other countries, and/or the EU.
Copyright © 2021 Broadcom. All Rights Reserved.
The term “Broadcom” refers to Broadcom Inc. and/or its subsidiaries. For more
information, please visit www.broadcom.com.
Broadcom reserves the right to make changes without further notice to any
products or data herein to improve reliability, function, or design.
Information furnished by Broadcom is believed to be accurate and reliable.
However, Broadcom does not assume any liability arising out of the application
or use of this information, nor the application or use of any product or
circuit described herein, nor does it convey any license under its patent
rights nor the rights of others.
Introduction
GaN Power Semiconductor
The Gallium Nitride (GaN) power semiconductor is rapidly emerging into the
commercial market delivering huge benefits over conventional Silicon-based
power semiconductors. GaN can improve overall system efficiency with lower on-
resistance and the higher switching capability can reduce the overall system
size and costs. The technical benefits coupled with lower costs have increased
the fast adoption of GaN power semiconductors in applications, such as
industrial power supplies and renewable energy inverters.
Broadcom gate drive optocouplers have been used extensively in driving
Silicon-based semiconductors, such as IGBT. This document describes how the
gate drive optocoupler, ACFJ-3262, can be used to drive GaN FET. The half-
bridge evaluation board features ACFJ-3262, 10A dual-channel gate drive
optocoupler, and Nexperia’s GAN039-650NBB FET. The half-bridge evaluation
board enables the basic study of the switching characteristics and efficiency,
by means of configuring for synchronous rectification, in either buck or boost
mode. The high-voltage input and output operate at up to 400 VDC, with the
current limit of the inductor at 15A to 16A, depending upon cooling, ambient
temperature, and switching frequency.
Figure 1: ACFJ-3262 Nexperia GAN039-650NBB Half-Bridge Evaluation Board
Design Features
The ACFJ-3262 Nexperia GAN039-650NBB half-bridge evaluation features one
ACFJ-3262 gate drive optocoupler and two Two GAN039-650NBB GaN FETs.
One ACFJ-3262 gate drive optocoupler
- 10A peak (typical), rail-to-rail output
- Separate source and sink outputs
- 95-ns max. propagation delay
- 100-kV/µs min. common mode rejection (CMR) at VCM = 1000
- 8.6V UVLO with hysteresis
- Wide operating VDD Range: 10V to 25 V
- Wide automotive temperature range: –40°C to 125°C
- Dual channel in SO-24 package
- CTI > 600V
- Greater than 2.8-mm channel-to-channel separation
- Safety approvals:
– UL Recognized 5000 VRMS for 1 minute
– CSA
– IEC/EN/DIN EN 60747-5-5 VIORM = 1230 VPEAK
Two GAN039-650NBB GaN FETs
-
Simplified driver design as standard-level MOSFET gate drivers can be used:
– 0V to 12V drive voltage
– Gate threshold voltage VGSth of 4V -
Robust gate oxide with ±20V VGS rating
-
High gate threshold voltage of 4V for gate bounce immunity
-
Low body diode Vf for reduced losses and simplified dead-time adjustments
-
Transient over-voltage capability for increased robustness
-
CCPAK package technology:
– Improved reliability, with reduced Rth(j-MB) for optimal cooling
– Lower inductances for lower switching losses and EMI
– 175°C maximum junction temperature
– High board-level reliability absorbing mechanical stress during thermal cycling, unlike traditional QFN packages
– Visual (AOI) soldering inspection, no need for expensive X-ray equipment
– Easy solder wetting for good mechanical solder joints
Board Description
Functional Block Diagram
The evaluation board has a half-bridge topology as shown in Figure 2. Two
pairs of high-voltage ports, J2/J3 and J5/J7 serve as either high-voltage
input or output, depending on whether it is a buck or boost configuration. In
either case, one GaN FET acts as the active power switch while the other
carries the freewheeling current. The latter device may be enhanced as a
synchronous rectifier as well. With GaN FETs, the reverse recovery charge is
low, and there is no need for additional freewheeling diodes.
The high-side and low-side PWM signals are connected to connector P1, which is
used to drive the LEDs of ACFJ-3262 directly.
An inductor is provided as a starting point for investigation. This is a
330-µH toroid intended to demonstrate a reasonable compromise between size and
efficiency with the current limited at 15A to 16A and at a switching frequency
of 100 kHz.
Figure 2: Half-Bridge Evaluation Board Functional Block Diagram
Figure 3: Functional Block Disposition on the Evaluation Board
Pin Assignment
Pin assignment for the P1 connector is shown in Table 1.
Table 1: Pin Assignment of Connector P1 (User Interface Connector)
| Label | Function | Direction |
|---|---|---|
| DC12VIN | 12V power supply. If the DC-DC converter is not used, the 12V input |
can be applied either at P1 or J1, and R8 and R9 are populated with 0Ω for the
low side supply. The high side supply can then be derived from the bootstrap
circuit, D1 and R4. Alternatively, the 12V can also be used with DC-DC
converter MGJ1D121505MPC-R7 to provide isolated power supply.| Input
NC| No connection.| N/A
GND| Reference ground for the 12V power supply.| Input
NC| No connection.| N/A
AN_L| 5V PWM input signal for the low side driver. Connects to the anode of
the low side gate driver.| Input
NC| No connection.| N/A
CA_L| Reference ground for the low side driver PWM input signal. Connects to
the cathode of the low side gate driver.| Input
Table 1: Pin Assignment of Connector P1 (User Interface Connector) (Continued)
| Label | Function | Direction |
|---|---|---|
| NC | No connection. | N/A |
| AN_H | 5V PWM input signal for the high side driver. Connects to the anode of | |
| the high side gate driver. | Input | |
| NC | No connection. | N/A |
| CA_H | Reference ground for the high side driver PWM input signal. Connects to | |
| the cathode of the high side gate driver. | Input | |
| NC | No connection. | N/A |
Pin assignment for P2, gate driver power supply connector is shown in Ta ble
2. There is no connection needed if DC-DC converters are used.
Table 2: Pin Assignment of Connector P2_L for Gate Driver, ACFJ-3262
Power Supply
| Label | Function | Direction |
|---|---|---|
| P2_L, VDDL | Output stage low side power supply. Recommended 10V to 12V for the |
VGS of the GaN FET. The high side supply can then be derived from the
bootstrap circuit, D1 and R4. DC-DC converters MGJ1D121505MPC-R7 are not
needed if this power supply scheme is used.| Input
P2_L, PGND| Reference ground for the output stage low-side power supply.|
Input
High voltage BUS and Load connections are shown in Table 3.
Table 3: High Voltage BUS (+HVDC and –HVDC) and Load Connection
| Label | Function | Direction |
|---|---|---|
| J2(+HVDC), J5 | High voltage input for Buck mode or high voltage output for | |
| Boost mode. The high voltage input and output can operate at up to 400VDC. |
Input/Output
J3, J7| Reference ground for the high voltage input or output.| Input/Output
Circuit Description
The schematic of the half-bridge evaluation board is shown in Figure 4.
Figure 4: Schematic of the Half-Bridge Evaluation Board
Input Connector and Power Supply Circuit
P1 is the 12 pins input connector that interfaces to the 12V supply and PWM
signals. In the standard setup where the DC-DC converter is not used, the 12V
input can be applied either at P1 or J1, and R8 and R9 are populated with 0Ω
for the low side supply. The high side supply can then be derived from the
bootstrap circuit, D1 and R4. Alternatively, the externally isolated 12V
supply can also be connected to P2_L. In this case, there is no connection
needed for DC12V_In at P1, and R8 and R9 should not be populated. The
bootstrap power supply can then be used for the high side gate driver using
bootstrap diode D1 and resistor R4. For DC-DC converter setup, the 12V DC
power supply can be connected to DC12V_In (Pin1) and GND (Pin 3) to provide
isolated power supply to the secondary side through U2_L and U2_H. The Murata
MGJ1D121505MPC-R7 is a 12V to +15V/–5V DC-DC converter and TLV76012DBZR is a
12V linear voltage regulator. They are used to provide 12V isolated supply to
the high and low side gate driver optocoupler, U1.
Gate Driver Circuit
The half-bridge evaluation board uses a dual-channel gate drive optocoupler
U10, ACFJ-3262 to drive the GaN FETs directly. The ACFJ-3262 is a basic gate
driver optocoupler used to isolate and drive the GaN FETs. It has a rail-to-
rail output with 10A maximum output current to provide fast switching high
voltage and driving current to turn-on and off the GaN efficiently. The
ACFJ-3262 has a propagation delay of less than 95 ns. The very high CMR,
common mode rejection of 100 kV/µs(min.) is required to isolate high transient
noise during the high-frequency operation from causing erroneous outputs.
It is certified by UL1577 for up to VISO 5000VRMS/min and IEC 60747-5-5 for
working voltage, VIORM up to 1230VPEAK. The LED inputs of the gate driver use
a split resistor network of 120Ω at the anode and cathode. This is to balance
the input impedance of the LEDs to achieve the high CMR of 100 kV/µs. The
ACFJ-3262 has a UVLO threshold voltage of 8.6V, suitable for 10V to 12V gate
operation of the GaN FET GAN039-650NBB. It has dual output, VOutP1 and VOutP2
to control the turning on and off of the GaN FET using external 15Ω gate
resistors, Rgon and Rgoff. With the 12V supply, this translates to an
approximate 0.8A peak current to the gate of the GaN FET.
Ferrite beads, FBL and FBH must be fitted in series with the gate of the GaN
FET and should be located as close as possible to the gate pin. Keep the gate-
source loop as compact as possible to minimize the gate loop inductance. The
Ferrite bead damps the resonant circuit made up of the gate-source loop
inductance and the GaN FET input capacitance, thus providing fast switching
stability. Use BLM18PG300SN1D with an impedance of 30Ω at 100 MHz. 14V TVS
diodes D9 and D10, can be used to clamp and protect the gate of the GaN FET
and gate driver output. However, the GaN FET does not require this diode for
normal operation. The TVS diode must be selected carefully to prevent adverse
effects on the switching performance.
GaN FET Circuit
The half-bridge evaluation board uses two GaN FETs, Q1 for the high-side
switch and Q2 for the low-side switch. The GAN039-650NBB is a 650V, 33-mΩ
normally-off GaN FET that combines Nexperia’s latest high-voltage GaN HEMT H2
technology and low-voltage silicon MOSFET technologies in a CCPAK1212 package.
Use a DC-link snubber, which consists of R17/R18/R19 and C33/C34/C35 to lower
the Q factor of any resonance in the HVDC bus. That resonance acts as a load
on the high-gain amplifier, which is the GaN FET and can lead to instability.
The remaining capacitors, C4-6/C17/C24.C36–16 are high-frequency DC-link
components, placed very close to the GaN FETs for fast switching half-bridge
operations.
Buck and Boost Configurations
The buck and boost configurations are shown in Figure 5 and Figure 6. For buck
mode, the HVDC input, J2/J3, is connected to the high-voltage input supply,
and the output is taken from J5/J7. For boost mode, the high-voltage input
supply is connected to J5/J7, and the output is taken from J2/J3. Note that in
boost mode, a load must be connected. The load current affects the output
voltage up to the transition from discontinuous conduction mode (DCM) to
continuous conduction mode (CCM). In buck mode, the load may be an open
circuit. In the case of buck mode with no load, the ripple current in the
inductor is symmetric about zero, and the soft switching behavior of the GaN
FETs may be studied.
Figure 5: Schematic of the Half-Bridge Evaluation Board for Buck Mode
Switching Waveforms and Efficiency Test
Figure 7: Multiple Pulse Tests at 400V BUS Voltage and Drain Current Stepped to 60A
Figure 9: Switching On at 60A
Schematics Layout, and BOM
This section provides full schematics, layout, and bill of materials of the
half-bridge evaluation board. This information enables customers to modify the
design according to specific requirements.
Figure 11: Schematic of the Half-Bridge Evaluation Board
| 
---|---
| 
Documents / Resources
|
BROADCOM ACFJ-3262 Nexperia GAN 039-650NBB Half Bridge Evaluation
Board
[pdf] User Manual
ACFJ-3262 Nexperia GAN 039-650NBB Half Bridge Evaluation Board, ACFJ-3262,
Nexperia, GAN 039-650NBB, Half Bridge Evaluation Board, Half Evaluation Board,
Evaluation Board, Bridge Evaluation Board, Board
---|---
References
Read User Manual Online (PDF format)
Read User Manual Online (PDF format) >>