STMicroelectronics STS13N3LLH5 N-channel Power Mosfet Instruction Manual
- June 12, 2024
- STMicroelectronics
Table of Contents
STMicroelectronics STS13N3LLH5 N-channel Power Mosfet
Features
| Type | V DSS | R DS(on) | I D |
|---|---|---|---|
| STS13N3LLH5 | 30 V | <0.0066 | 13 A (1) |
The value is rated according to Rthj-pcb.
- RDS(on) * Qg industry benchmark
- Extremely low on-resistance RDS(on)
- Very low switching gate charge
- High avalanche ruggedness
- Low gate drive power losses
Applications
- Switching applications
Description
This product is an N-channel Power MOSFET that utilizes the 5th generation of design rules for ST’s proprietary STripFET™ technology. The lowest available RDS(on)* Qg, in SO-8 package, makes this device suitable for the most demanding DCDC converter applications, where high power density is to be achieved.
Figure 1. Internal schematic diagram
Table 1. Device summary
| Order code | Marking | Package | Packaging |
|---|---|---|---|
| STS13N3LLH5 | 13D3L | SO-8 | Tape and reel |
Electrical ratings
Table 2. Absolute maximum ratings
| Symbol | Parameter | Value | Unit |
|---|---|---|---|
| VDS | Drain-source voltage (VGS = 0) | 30 | V |
| VGS | Gate-source voltage | + 22 / – 20 | V |
(1)
ID
| Drain current (continuous) at TC = 25 °C| 13| A
ID (1)| Drain current (continuous) at TC=100 °C| 8.1| A
IDM(2)| Drain current (pulsed)| 52| A
PTOT (2)| Total dissipation at TC = 25 °C| 2.7| W
| Derating factor| 0.02| W/°C
TJ
Tstg
| Operating junction temperature Storage temperature| ****
-55 to 150
| ****
°C
- The value is rated according to Rthj-pcb.
- Pulse width limited by safe operating area.
Table 3. Thermal resistance
| Symbol | Parameter | Value | Unit |
|---|---|---|---|
| Rthj-PCB (1) | Thermal resistance junction-pcb | 46 | °C/W |
- When mounted on an FR-4 board of 1 inch², 2 oz Cu, t < 10 sec.
Table 4. Avalanche data
| Symbol | Parameter | Value | Unit |
|---|---|---|---|
| IAV | Not-repetitive avalanche current, (pulse width limited by Tj Max) | 8.5 | A |
| EAS | Single pulse avalanche energy |
(starting TJ = 25 °C, ID = IAV , VDD = 24 V)
| 180| mJ
Electrical characteristics
(TCASE=25 °C unless otherwise specified).
Table 5. On/off states
Symbol| Parameter| Test conditions| Min.| Typ.|
Max.| Unit
---|---|---|---|---|---|---
V(BR)DSS| Drain-source breakdown voltage (VGS = 0)| ID = 250 µA| 30| | | V
IDSS
| Zero gate voltage drain current (VGS = 0)| VDS = max rating, VDS =max rating TC = 125 °C| | | 1
10
| µA
µA
IGSS| Gate body leakage current (VDS = 0)| VGS = + 22 / – 20 V| | | ±100| nA
VGS(th)| Gate threshold voltage| VDS= VGS, ID = 250 µA| 1| | | V
RDS(on)| Static drain source on resistance| VGS= 10 V, ID= 6.5 A
VGS= 4.5 V, ID= 6.5 A
| | 0.006
0.0052
| 0.0066
0.0091
| W
W
Table 6. Dynamic
Symbol| Parameter| Test conditions| Min.| Typ.|
Max.| Unit
---|---|---|---|---|---|---
Ciss Coss Crss| Input capacitance Output capacitance
Reverse transfer capacitance
| ****
VDS = 25 V, f=1 MHz, VGS=0
| ****
–
| 1500
295
39
| ****
–
| pF pF pF
Qg| Total gate charge| VDD=15 V, ID = 13A| | 12| | nC
Qgs| Gate-source charge| VGS= 4.5 V| –| 4| –| nC
Qgd| Gate-drain charge| (see Figure 14)| | 4.7| | nC
Table 7. Switching times
Symbol| Parameter| Test conditions| Min.| Typ.|
Max.| Unit
---|---|---|---|---|---|---
td(on) tr
td(off) tf
| Turn-on delay time Rise time
Turn-off delay time Fall time
| VDD=15 V, ID= 6.5 A, RG=4.7 W, VGS =10 V
(see Figure 13)
| ****
–
| 9.3
14.5
22.7
4.5
| ****
–
| ns ns ns ns
Table 8. Source drain diode
Symbol| Parameter| Test conditions| Min.| Typ.|
Max.| Unit
---|---|---|---|---|---|---
ISD| Source-drain current| | –| | 13| A
I (1)
SDM
| Source-drain current (pulsed)| | –| | 52| A
VSD(2)| Forward on voltage| ISD = 13 A, VGS=0| –| | 1.1| V
trr| Reverse recovery time| ISD = 13 A,| | 25| | ns
Qrr| Reverse recovery charge| di/dt = 100 A/µs,| –| 17.5| nC
IRRM| Reverse recovery current| VDD= 25 V, Tj=150 °C| | 1.4| A
- Pulse width limited by safe operating area.
- Pulsed: pulse duration=300μs, duty cycle 1.5 %.
Electrical characteristics (curves)
Test circuits
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark.
Table 9. SO-8 mechanical data
Dim.
| mm
---|---
Min.| Typ.| Max.
A| | | 1.75
A1| 0.10| | 0.25
A2| 1.25| |
b| 0.28| | 0.48
c| 0.17| | 0.23
D| 4.80| 4.90| 5.00
E| 5.80| 6.00| 6.20
E1| 3.80| 3.90| 4.00
e| | 1.27|
h| 0.25| | 0.50
L| 0.40| | 1.27
L1| | 1.04|
k| 0°| | 8°
ccc| | | 0.10
Revision history
Table 10. Document revision history
| Date | Revision | Changes |
|---|---|---|
| 30-Jun-2011 | 1 | First release. |
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