STMicroelectronics STS13N3LLH5 N-channel Power Mosfet Instruction Manual

STMicroelectronics STS13N3LLH5 N-channel Power Mosfet

Features

The value is rated according to Rthj-pcb.

• RDS(on) * Qg industry benchmark
• Extremely low on-resistance RDS(on)
• Very low switching gate charge
• High avalanche ruggedness
• Low gate drive power losses

Applications

• Switching applications

Description

This product is an N-channel Power MOSFET that utilizes the 5th generation of design rules for ST’s proprietary STripFET™ technology. The lowest available RDS(on)* Qg, in SO-8 package, makes this device suitable for the most demanding DCDC converter applications, where high power density is to be achieved.

Figure 1. Internal schematic diagram

Table 1. Device summary

Electrical ratings

Table 2. Absolute maximum ratings

(1)

ID

| Drain current (continuous) at TC = 25 °C| 13| A
ID (1)| Drain current (continuous) at TC=100 °C| 8.1| A
IDM(2)| Drain current (pulsed)| 52| A
PTOT (2)| Total dissipation at TC = 25 °C| 2.7| W
 | Derating factor| 0.02| W/°C
TJ

Tstg

| Operating junction temperature Storage temperature| ****

-55 to 150

| ****

°C

1. The value is rated according to Rthj-pcb.
2. Pulse width limited by safe operating area.

Table 3. Thermal resistance

1. When mounted on an FR-4 board of 1 inch², 2 oz Cu, t < 10 sec.

Table 4. Avalanche data

(starting TJ = 25 °C, ID = IAV , VDD = 24 V)

| 180| mJ

Electrical characteristics

(TCASE=25 °C unless otherwise specified).

Table 5. On/off states

Symbol| Parameter| Test conditions| Min.| Typ.| Max.| Unit
---|---|---|---|---|---|---
V(BR)DSS| Drain-source breakdown voltage (VGS = 0)| ID = 250 µA| 30|  |  | V

IDSS

| Zero gate voltage drain current (VGS = 0)| VDS = max rating, VDS =max rating TC = 125 °C|  |  | 1

10

| µA

µA

IGSS| Gate body leakage current (VDS = 0)| VGS = + 22 / – 20 V|  |  | ±100| nA
VGS(th)| Gate threshold voltage| VDS= VGS, ID = 250 µA| 1|  |  | V
RDS(on)| Static drain source on resistance| VGS= 10 V, ID= 6.5 A

VGS= 4.5 V, ID= 6.5 A

|  | 0.006

0.0052

| 0.0066

0.0091

| W

W

Table 6. Dynamic

Symbol| Parameter| Test conditions| Min.| Typ.| Max.| Unit
---|---|---|---|---|---|---
Ciss Coss Crss| Input capacitance Output capacitance

Reverse transfer capacitance

| ****

VDS = 25 V, f=1 MHz, VGS=0

| ****

–

| 1500

295

39

| ****

–

| pF pF pF
Qg| Total gate charge| VDD=15 V, ID = 13A|  | 12|  | nC
Qgs| Gate-source charge| VGS= 4.5 V| –| 4| –| nC
Qgd| Gate-drain charge| (see Figure 14)|  | 4.7|  | nC

Table 7. Switching times

Symbol| Parameter| Test conditions| Min.| Typ.| Max.| Unit
---|---|---|---|---|---|---
td(on) tr

td(off) tf

| Turn-on delay time Rise time

Turn-off delay time Fall time

| VDD=15 V, ID= 6.5 A, RG=4.7 W, VGS =10 V

(see Figure 13)

| ****

–

| 9.3

14.5

22.7

4.5

| ****

–

| ns ns ns ns

Table 8. Source drain diode

Symbol| Parameter| Test conditions| Min.| Typ.| Max.| Unit
---|---|---|---|---|---|---
ISD| Source-drain current|  | –|  | 13| A
I       (1)

SDM

| Source-drain current (pulsed)|  | –|  | 52| A
VSD(2)| Forward on voltage| ISD = 13 A, VGS=0| –|  | 1.1| V
trr| Reverse recovery time| ISD = 13 A,|  | 25|  | ns
Qrr| Reverse recovery charge| di/dt = 100 A/µs,| –| 17.5| nC
IRRM| Reverse recovery current| VDD= 25 V, Tj=150 °C|  | 1.4| A

1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration=300μs, duty cycle 1.5 %.

Electrical characteristics (curves)

Test circuits

Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark.

Table 9. SO-8 mechanical data

Dim.

| mm
---|---
Min.| Typ.| Max.
A|  |  | 1.75
A1| 0.10|  | 0.25
A2| 1.25|  |
b| 0.28|  | 0.48
c| 0.17|  | 0.23
D| 4.80| 4.90| 5.00
E| 5.80| 6.00| 6.20
E1| 3.80| 3.90| 4.00
e|  | 1.27|
h| 0.25|  | 0.50
L| 0.40|  | 1.27
L1|  | 1.04|
k| 0°|  | 8°
ccc|  |  | 0.10

Revision history

Table 10. Document revision history

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