ALPHA OMEGA AOD294A 100V N-Channel AlphaSGT Mosfet Owner’s Manual

May 15, 2024
Alpha Omega

ALPHA OMEGA logo AOD294A/AOI294A
100V N-Channel AlphaSGT™

General Description

  • Trench Power AlphaSGT™ technology
  • Low R DS(ON)
  • Logic Level Driving
  • Excellent QG x RDS(ON) Product (FOM)
  • Pb-Free lead Plating, RoHS and Halogen-Free Compliant

Applications

  • High Frequency Switching and Synchronous Recfification

Product Summary

VDS 100V
ID   (at VGS =10V) 55A
RDS(ON)  (at VGS =10V) < 12mΩ
RDS(ON) (at VGS =4.5V) < 15.5mΩ

100% UIS Tested
100% Rg TestedALPHA OMEGA AOD294A 100V N-Channel AlphaSGT Mosfet -
Fig

Orderable Part Number| Package Type| Form| Minimum Order Quantity
---|---|---|---
AOD294A| TO-252| Tape & Reel| 2500
AOI294A| TO-251A| Tube| 4000
Absolute Maximum Ratings T A=25°C unless otherwise noted
Parameter| Symbol| Maximum| Units
Drain-Source Voltage| VDS| 100| V
Gate-Source Voltage| VGS| ±20| V
Continuous Drain Current| TC=25°C| ID| 55| A
TC=100°C| 35
Pulsed Drain Current C| IDM| 138
Continuous Drain Current| TA=25°C| IDSM| 16| A
TA=70°C| 13
Avalanche Current C| IAS| 25| A
Avalanche energy      L=0.1mH C| EAS| 31| mJ
VDS Spike I| 10μs| VSPIKE| 120| V
Power Dissipation B| TC=25°C| PD| 73| W
TC=100°C| 30
Power Dissipation A| TA=25°C| PDSM| 6.2| W
TA=70°C| 4.0
Junction and Storage Temperature Range| TJ, TSTG| -55 to 150| °C

Electrical Characteristics (TJ =25°C unless otherwise noted)

Symbol| Parameter| Conditions| Min| Typ| Max| Units
---|---|---|---|---|---|---
STATIC PARAMETERS
BVDSS| Drain-Source Breakdown Voltage| ID=250mA, VGS=0V| 100| | | V
IDSS| Zero Gate Voltage Drain Current| VDS=100V, VGS=0V| | | 1| μA
TJ=55°C| | | 5
IGSS| Gate-Body leakage current| VDS=0V, VGS=±20V| | | ±100| nA
VGS(th)| Gate Threshold Voltage| VDS=VGS, ID=250mA| 1.5| 2.0| 2.5| V
RDS(ON)| Static Drain-Source On-Resistance| VGS=10V, ID=20A| | 10| 12| mΩ
TJ=125°C| | 18| 22
VGS=4.5V, ID=20A| | 12| 15.5| mΩ
gFS| Forward Transconductance| VDS=5V, ID=20A| | 67| | S
VSD| Diode Forward Voltage| IS=1A, VGS=0V| | 0.71| 1| V
IS| Maximum Body-Diode Continuous Current| | | 55| A
DYNAMIC PARAMETERS
Ciss| Input Capacitance| VGS=0V, VDS=50V, f=1MHz| | 2305| | pF
Coss| Output Capacitance| | 180| | pF
Crss| Reverse Transfer Capacitance| | 11.5| | pF
Rg| Gate resistance| f=1MHz| 0.2| 0.5| 1.0| Ω
SWITCHING PARAMETERS
Qg(10V)| Total Gate Charge| VGS=10V, VDS=50V, ID=20A| | 32.5| 50| nC
Qg(4.5V)| Total Gate Charge| | 15.5| 25| nC
Qgs| Gate Source Charge| | 6.5| | nC
Qgd| Gate Drain Charge| | 5| | nC
tD(on)| Turn-On DelayTime| VGS=10V, VDS=50V, RL=2.5W, RGEN=3W| | 7| | ns
tr| Turn-On Rise Time| | 3| | ns
tD(off)| Turn-Off DelayTime| | 27| | ns
tf| Turn-Off Fall Time| | 4| | ns
trr| Body Diode Reverse Recovery Time| IF=20A, di/dt=500A/ms| | 29.5| | ns
Qrr| Body Diode Reverse Recovery Charge| IF=20A, di/dt=500A/ms| | 160| | nC

A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power dissipation PDSM is based on RθJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user’s specific board design.
B. The power dissipation PD is based on T J(MAX) =150°C, using junction-to- case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature TJ(MAX) =150°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300ms pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsin k, assuming a maximum junction temperature of Tθ(MAX) =150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C.
I. L=100uH, Fsw=1Hz, Tj≤150C by repetitive UIS.

APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO MAKE CHANGES TO PRODUCT SPECIFICATIONS WITHOUT NOTICE. IT IS THE RESPONSIBILITY OF THE CUSTOMER TO EVALUATE SUITABILITY OF THE PRODUCT FOR THEIR INTENDED APPLICATION. CUSTOMER SHALL COMPLY WITH APPLICABLE LEGAL REQUIREMENTS, INCLUDING ALL APPLICABLE EXPORT CONTROL RULES, REGULATIONS AND LIMITATIONS.
AOS’ products are provided subject to AOS’ terms and conditions of sale which are set forth at: http://www.aosmd.com/terms_and_conditions_of_sale

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

ALPHA OMEGA AOD294A 100V N-Channel AlphaSGT Mosfet -
CHARACTERISTICSALPHA OMEGA
AOD294A 100V N-Channel AlphaSGT Mosfet - CHARACTERISTICS
1ALPHA OMEGA AOD294A 100V
N-Channel AlphaSGT Mosfet - CHARACTERISTICS 2ALPHA OMEGA AOD294A 100V N-Channel AlphaSGT Mosfet -
CHARACTERISTICS 3

Rev.3.1: August 2023
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References

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