GeneSiC G3R350MT12D Silicon Carbide MOSFET Owner’s Manual
- May 15, 2024
- GeneSiC
Table of Contents
GeneSiC G3R350MT12D Silicon Carbide MOSFET Owner’s Manual
Features
- G3R™ (3rd Generation) Technology
- Low Temperature Coefficient of R
- Lower Q and Smaller R
- Low Device Capacitances (C , C )
- LoRing™ – Electromagnetically Optimized Design
- Superior Cost-Performance Index
- Robust Body Diode with Low V and Low Q
- 100% Avalanche (UIL) Tested
Package
Advantages
- Compatible with Commercial Gate Drivers
- Low Conduction Losses at all Temperatures
- Faster and More Efficient Switching
- Lesser Switching Spikes and Lower Losses
- Reduced Ringing
- Better Power Density and System Efficiency
- Ease of Paralleling without Thermal Runaway
- Superior Robustness and System Reliability
Applications
- Auxiliary Power Supply
- Solar Inverters
- UPS
- High Voltage DC-DC Converters
- Switched Mode Power Supplies
- Auxiliary Motor Drives
- High Frequency Converters
Absolute Maximum Ratings (At T = 25°C Unless Otherwise Stated)
| Parameter | Symbol | Conditions | Values | Unit | Note |
|---|---|---|---|---|---|
| Drain-Source Voltag | VDS(max | V = 0 V, I = 100 µA | 1200 | V | |
| Gate-Source Voltage (Dynamic) | VGS(max) | -10/+22 | V | ||
| Gate-Source Voltage (Static) | VGS(op)-ON | ||||
| VGS(op)-OFF | Recommended Operation | +15 to +18 | |||
| -5 to -3 | V | ||||
| Continuous Forward Current | ID | Tc=25°C, VGS-5/+15 VTc=100°C, VGS-5/+15 | |||
| VTc=135°C, VGS = -5/+15 V | 1075 | A | Fig. 15 | ||
| Pulsed Drain Current | ID(pulse) | tp ≤3µs, D ≤ 1%, VGS = 15 V, Note 1 | 16 | A |
Fig. 14
Power Dissipation| PD| Tc = 25°C| 63| W| Fig. 16
Non-Repetitive Avalanche Energy| EAS| L = 21.5 MH, IAS = 2.0 A| 43| mJ|
Operating and Storage Temperature| Tj, Tstg| | -55 to 175| °C|
Thermal/Package Characteristics
| Parameter | Symbol | Conditions | Min. | Values Type | Max | Unit | Note |
|---|---|---|---|---|---|---|---|
| Thermal Resistance, Junction – Case | Rthuc | 2.4 | °C/W | Fig. 13 | |||
| WT | 6.1 | g | |||||
| TM | Screws to Heatsink | 1.1 | Nm |
Electrical Characteristics (At T = 25°C Unless Otherwise Stated)
References
- genesicsemi.com/sic-mosfet/
- genesicsemi.com/compliance
- genesicsemi.com/quality
- genesicsemi.com/reliability
- genesicsemi.com/technical-support
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